Toshiba TC9349AFG Manual page 126

Cmos digital integrated circuit silicon monolithic
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Electronic Volume
(VRout1, VRin1, VRcom, VRin2, VRout2)
Characteristics
Volume resistance
Analog switch ON resistance
Attenuation error
A/D Converter
(ADin1 to ADin4)
Characteristics
Analog input voltage range
Resolution
Total conversion error
Analog input leak
Phase Comparator
(DO1/OT1/P, DO2/OT2/N)
Characteristics
"H" level
Output current
"L" level
Output resistance
Tristate leak current
Test
Symbol
Test Condition
Circuit
R
IN ~ GND resistor
VR
R
Analog switch on resistor
ON
∆ ATT
Test
Symbol
Test Condition
Circuit
V
(ADin1 ~ ADin4)
AD
V
RES
= V
V
, V
IH
DB
I
LI
(ADin1 to ADin4)
Test
Symbol
Test Condition
Circuit
= 3.0 V,
V
DB
= V
V
OH
DB
I
OH5
when the output resistance is
off
= 3.0 V,
V
DB
= 0.2 V
V
OL
I
OL5
when the output resistance is
off
R
(DO1, DO2)
OUT1
R
(DO1, DO2)
OUT2
R
(DO1, DO2)
OUT3
(DO1, DO2) V
I
TL
= 3.0 V, V
V
TLH
126
Min
Typ.
15
500
Min
Typ.
0
± 0.5
= 0 V
IL
Min
Typ.
− 0.2 V
− 0.4
− 0.8
0.4
100
= 3.0 V,
DB
= 0 V
TLL
TC9349AFG
Max
Unit
k Ω
30
60
800
± 2.0
0
dB
Max
Unit
~
V
V
DB
6
bit
± 1.0
LSB
± 1.0
µ A
Max
Unit
mA
0.8
5
k Ω
50
± 100
nA
2006-02-24

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