Ldci/Ldei Load Memory And Increment - Samsung S3C80M4/F80M4 User Manual

S3C80M4/F80M4
LDCI/LDEI
— Load Memory and Increment
LDCI/LDEI dst,src
dst ← src
Operation:
rr ← rr + 1
These instructions are used for user stacks or block transfers of data from program or data
memory to the register file. The address of the memory location is specified by a working register
pair. The contents of the source location are loaded into the destination location. The memory
address is then incremented automatically. The contents of the source are unaffected.
LDCI refers to program memory and LDEI refers to external data memory. The assembler makes
'Irr' even for program memory and odd for data memory.
Flags: No flags are affected.
Format:
opc
Examples: Given: R6 = 10H, R7 = 33H, R8 = 12H, program memory locations 1033H = 0CDH and
1034H = 0C5H; external data memory locations 1033H = 0DDH and 1034H = 0D5H:
LDCI
LDEI
dst | src
R8,@RR6 ; 0CDH (contents of program memory location 1033H) is loaded
; into R8 and RR6 is incremented by one (RR6 ← RR6 + 1)
; R8 = 0CDH, R6 = 10H, R7 = 34H
R8,@RR6 ; 0DDH (contents of data memory location 1033H) is loaded
; into R8 and RR6 is incremented by one (RR6 ← RR6 + 1)
; R8 = 0DDH, R6 = 10H, R7 = 34H
Bytes Cycles Opcode
(Hex)
2 10
INSTRUCTION SET
Addr Mode
dst src
E3 r Irr
6-55