Toshiba GRL150-100 Series Instruction Manual page 31

Element Range
TEF1RM 0.010 – 1.500
(RTMS)
EF2 0.1 – 25.0 A
(0.02 – 5.00 A)
TEF2 0.00 – 300.00 s
EF3 0.1 – 250.0 A
(0.02 – 50.00 A)(*)
TEF3 0.00 – 300.00 s
EF4 0.1 – 250.0 A
(0.02 – 50.00 A)(*)
TEF4 0.00 – 300.00 s
[EF1EN] Off / On
[MEF1] DT/IEC/IEEE/US/CON
[MEF1C]
MEF1C-IEC NI / VI / EI / LTI
MEF1C-IEEE MI / VI / EI
MEF1C-US CO2 / CO8
[EF1R] DEF / DEP
[EF2EN] Off / On
[EF3EN] Off / On
[EF4EN] Off / On
[OC-ICD] NA / BLK
(*) Current values shown in the parenthesis are in the case of a 1 A rating. Other current values are in
the case of a 5 A rating.
Step Default Remarks
0.001 1.000 EF1 dependent time delayed reset time
multiplier. Required if [EF1R] = DEP.
0.1 A 1.5 A EF2 threshold setting
(0.01 A) (0.30 A)
0.01 s 1.00 s EF2 definite time setting.
0.1 A 25.0 A EF3 threshold setting
(0.01 A) (5.00 A)
0.01 s 1.00 s EF3 definite time setting
0.1 A 50.0 A EF4 threshold setting
(0.01 A) (10.00 A)
0.01 s 1.00 s EF4 definite time setting
On EF1 Enable
DT EF1 time characteristic
EF1 inverse curve type.
NI Required if [MEF1] = IEC.
MI Required if [MEF1] = IEEE.
CO2 Required if [MEF1] = US.
DEF EF1 reset characteristic. Required if [MEF1]
= IEEE, US or CON.
Off EF2 Enable
Off EF3 Enable
Off EF4 Enable
NA OC/EF/SEF blocked by inrush current
⎯ 30 ⎯
6 F 2 S 0 8 2 8