Bvebo - Keithley S530 User Manual

Section 3: Test subroutine library reference
Example
result = bvdss1(d, g, s, sub, vdsmin, vdsmax, nstep, ipgm, udelay, type);
Schematic

bvebo

This subroutine measures emitter-base breakdown voltage at a specified current with the collector open.
Usage
double bvebo(int e, int b, int c, int sub, double ipgm, double vlim, char type);
e
b
c
sub
ipgm
vlim
type
Returns
Details
This subroutine measures the emitter-base breakdown voltage by forcing an emitter current with the
collector pin open. Always call this subroutine last when testing transistors.
At high values of I
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
A delay is incorporated into the bvebo subroutine; this delay is the calculated time required for stable
forcing of ipgm within the vlim voltage limit.
V/I polarities
The polarity of ipgm is determined by the device type.
3-20
S530 Parametric Test System Test Subroutine Library User's Manual
Input The emitter pin of the device
Input The base pin of the device
Input The collector pin of the device
Input The substrate pin of the device
Input
The forced emitter-base current (I
Input The emitter voltage limit, in volts
Type of transistor: "N" or "P"
Input
Output Emitter-base voltage:

-1.0 = TYPE not "N" or "P"

+2.0E + 21 = Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (vlim)
, degradation of the emitter-base junction can occur, which will lower beta ().
EBO
S
), in amperes
EB
S530-907-01 Rev. A / September 2015