Bvdss - Keithley S530 User Manual

S530 Parametric Test System Test Subroutine Library User's Manual
Details
This subroutine sweeps the collector-emitter voltage from vcemin to vcemax while monitoring the
collector current with the base shorted to the emitter. When the programmed current level (ipgm) is
reached, the last collector-emitter voltage increment is returned as bvces1.
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
Set the udelay parameter to approximate C * vcemax / ipgm, where C = Junction capacitance of
the device under test.
V/I polarities
The polarities of vcemin, vcemax, and ipgm are determined by device type.
Source-measure units (SMUs)

SMU1: Forces V
Example
result = bvces1(e, b, c, sub, vcemin, vcemax, nstep, ipgm, udelay, type);
Schematic

bvdss

This subroutine measure drain-source breakdown voltage (V
Usage
double bvdss(int d, int g, int s, int sub, double ipgm, double vlim);
d
g
s
sub
ipgm
vlim
Returns
S530-907-01 Rev. A / September 2015
, programmed current limit = 1.25 *ipgm, measures I
CE
Input The drain pin of the device
Input The gate pin of the device
Input The source pin of the device
Input The substrate pin of the device
Input The forced drain current, in amperes
Input The drain voltage limit, in volts
Output Measured breakdown voltage:

+2.0E + 21 = Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (vlim)
Section 3: Test subroutine library reference
= 0) when the gate is grounded with the source.
G
CEO
3-17