Bvceo - Keithley S530 User Manual

S530 Parametric Test System Test Subroutine Library User's Manual

bvceo

This subroutine measures the collector-emitter breakdown voltage (V
with the base terminal left open.
Usage
double bvceo(int e, int b, int c, int sub, double ipgm, double vlim, char type);
e
b
c
sub
ipgm
vlim
type
Returns
Details
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
A delay is incorporated into the bvceo subroutine; this delay is the calculated time required for stable
forcing of ipgm within the vlim voltage limit.
V/I polarities
The polarity of ipgm is determined by the device type.
Source-measure units (SMUs)

SMU1: Forces I
Example
result = bvceo(e, b, c, sub, ipgm, vlim, type);
Schematic
S530-907-01 Rev. A / September 2015
Input The emitter pin of the device
Input The base pin of the device
Input The collector pin of the device
Input The substrate pin of the device
Input
The forced collector-emitter current (I
Input The collector voltage limit, in volts
Type of transistor: "N" or "P"
Input
Output Collector-emitter voltage:

-1.0 = TYPE not "N" or "P"

+2.0E + 21 = Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (vlim)
, programmed voltage limit, measures bvceo
CEO
Section 3: Test subroutine library reference
) when the collector current (I
CE
), in amperes
CE
) is forced
C
3-13