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7.5 Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used, board pattern,
etc.). Use the following characteristics as reference values.
OSC1 crystal oscillation circuit
Unless otherwise specified:
V
=3.0V, V
=0V, f
DD
SS
OSC1
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
OSC3 ceramic oscillation circuit
Unless otherwise specified:
V
=3.0V, V
=0V, Ceramic oscillator: 3.58MHz, C
DD
SS
Item
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
S1C63558 TECHNICAL MANUAL
=32.768kHz, C
=25pF, C
=built-in, Ta=-20 to 70 C
G
D
Symbol
t
sta 3sec ( V
Vsta
DD
t
stp 10sec ( V
Vstp
DD
C
Including the parasitic capacitance inside the IC (in chip)
D
f/ V
V
=2.2 to 5.5V
DD
f/ IC
f/ C
C
=5 to 25pF
G
G
=5pF ( V
)
V
C
hho
G
DD
R
Between OSC1 and V
leak
GC
Symbol
Vsta
(V
)
DD
t
sta
V
=2.2 to 5.5V
DD
Vstp
(V
)
DD
CHAPTER 7: ELECTRICAL CHARACTERISTICS
Condition
)
)
SS
=C
=30pF, Ta=-20 to 70 C
DC
Condition
EPSON
Min.
Typ.
Max.
Unit
2.2
V
2.2
V
14
pF
10
ppm
-10
10
ppm
10
20
ppm
5.5
V
200
M
Min.
Typ.
Max.
Unit
2.2
V
5
ms
2.2
V
163
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