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CHAPTER 7: ELECTRICAL CHARACTERISTICS
7.5 Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used, board pattern,
etc.). Use the following characteristics as reference values.
OSC1 crystal oscillation circuit
Unless otherwise specified:
V
=3.0V, V
=0V, f
DD
SS
OSC1
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
OSC3 ceramic oscillation circuit
Unless otherwise specified:
V
=3.0V, V
=0V, Ceramic oscillator: 4MHz, C
DD
SS
Item
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
OSC3 CR oscillation circuit (built-in R type)
Unless otherwise specified:
V
=3.0V, V
=0V, R
=Built in, Ta=-20 to 70°C
DD
SS
CR
Item
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
OSC3 CR oscillation circuit (external R type)
Unless otherwise specified:
V
=3.0V, V
=0V, R
=30kΩ (2MHz), Ta=-20 to 70°C
DD
SS
CR
Item
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
144
=32.768kHz, C
=25pF, C
=built-in, Ta=-20 to 70°C
G
D
Symbol
t
sta≤3sec ( V
Vsta
DD
t
stp≤10sec ( V
Vstp
DD
C
Including the parasitic capacitance inside the IC (in chip)
D
∂f/∂V
V
=1.8 to 3.6V
DD
∂f/∂IC
∂f/∂C
C
=5 to 25pF
G
G
=5pF ( V
)
V
C
hho
G
DD
R
Between OSC1 and V
leak
=C
GC
Symbol
Vsta
(V
)
DD
t
sta
V
=2.4 to 3.6V
DD
Vstp
(V
)
DD
Symbol
f
OSC3
Vsta
(V
)
DD
t
sta
V
=2.4 to 3.6V
DD
Vstp
(V
)
DD
Symbol
f
OSC3
Vsta
(V
)
DD
t
sta
V
=2.4 to 3.6V
DD
Vstp
(V
)
DD
Condition
)
)
SS
=30pF, Ta=-20 to 70°C
DC
Condition
Condition
Condition
EPSON
Min.
Typ.
Max.
Unit
1.5
V
1.5
V
14
pF
5
ppm
-10
10
ppm
10
20
ppm
3.6
V
200
MΩ
Min.
Typ.
Max.
Unit
2.4
V
5
ms
2.4
V
Min.
Typ.
Max.
Unit
-30
30
%
1,100kHz
2.4
V
3
ms
2.4
V
Min.
Typ.
Max.
Unit
-30
30
%
2.4
V
3
ms
2.4
V
S1C63666 TECHNICAL MANUAL
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