Table of Contents
Advertisement
7 ELECTRICAL CHARACTERISTICS
7.7 Oscillation Characteristics
Oscillation characteristics change depending on conditions (board pattern, components used, etc.). Use the
following characteristics as reference values. In particular, when a ceramic oscillator is used for OSC3, use
the oscillator manufacturer's recommended values for constants such as capacitance and resistance. The
oscillation start time is important because it becomes the wait time when OSC3 clock is used. (If OSC3 is
used as CPU clock before oscillation stabilizes, the CPU may malfunction.)
OSC1 (Crystal)
Unless otherwise specified: V
DD
Item
Oscillation start time
External gate capacitance
Built-in gate capacitance
Built-in drain capacitance
Frequency/IC deviation
Frequency/power voltage deviation
Frequency adjustment range
*
C2-TYPE Made by Seiko Epson corporation
Note) 1
When crystal oscillation is selected by the mask option.
2
When crystal oscillation (gate capacitor built-in) is selected by the mask option.
OSC1 (CR)
Unless otherwise specified: V
Item
Oscillation start time
Frequency/IC deviation
OSC3 (Crystal)
Unless otherwise specified: V
Crystal oscillator = CA-301 4MHz / CA-301 8MHz*, R
Item
Oscillation start time (Normal mode)
Oscillation start time (High speed mode)
*
CA-301 4MHz / CA-301 8MHz Made by Seiko Epson corporation
Note) 1
The crystal oscillation start time changes by the crystal oscillator to be used, C
OSC3 (Ceramic)
Unless otherwise specified: V
Ceramic oscillator = CSA4.00MG / CSA8.00MTZ*, R
Item
Oscillation start time (Normal mode)
Oscillation start time (High speed mode)
*
CSA4.00MG / CSA8.00MTZ Made by Murata Mfg. corporation
OSC3 (CR)
Unless otherwise specified: V
Item
Oscillation start time
(Normal mode)
Oscillation start time
(High speed mode)
Frequency/IC deviation
(Normal mode)
Frequency/IC deviation
(High speed mode)
134
= 1.8 to 5.5 V, V
= 0 V, Ta = 25°C, Crystal oscillator = C2-TYPE*, C
SS
Symbol
t
sta
C
Including board capacitance
G1
C
In case of the chip
G1
C
In case of the chip
D1
∂
∂
f/
IC
V
= constant
DD
∂
∂
f/
V
∂
∂
f/
C
V
= constant, C
G
DD
= 1.8 to 5.5 V, V
= 0 V, Ta = -40 to 85°C
DD
SS
Symbol
t
sta
∂
∂
f/
IC
R
= constant
CR
= Within the operating voltage in each operating mode, V
DD
= 1 MΩ, C
F
Symbol
t
sta
4.0 MHz crystal oscillator
t
sta
8.0 MHz crystal oscillator
= Within the operating voltage in each operating mode, V
DD
= 1 MΩ, C
F
Symbol
t
sta
4.0 MHz ceramic oscillator
t
sta
8.0 MHz ceramic oscillator
= Within the operating voltage in each operating mode, V
DD
Symbol
t
sta
t
sta
∂
∂
f/
IC
R
= constant
CR
∂
∂
f/
IC
R
= constant
CR
Condition
Min.
-10
= 5 to 25 pF
25
G
Condition
Min.
-25
SS
= C
= 15 pF
G2
D2
Condition
Min.
G2
SS
= C
= 30 pF
G2
D2
Condition
Min.
SS
Condition
Min.
-25
-25
EPSON
= 25 pF (external), C
G1
Typ.
Max.
3
5
25
12
12
10
1
ppm/V
Typ.
Max.
100
25
= 0 V, Ta = 25°C,
Typ.
Max.
10
10
and C
.
D2
= 0 V, Ta = 25°C,
Typ.
Max.
1
1
= 0 V, Ta = -40 to 85°C
Typ.
Max.
100
100
25
25
E0C88832/88862 TECHNICAL MANUAL
= Built-in
D1
Unit
Note
S
pF
1
pF
2
pF
ppm
ppm
Unit
Note
µS
%
Unit
Note
mS
1
mS
1
Unit
Note
mS
mS
Unit
Note
µS
µS
%
%
Advertisement
Table of Contents
