Main Features - Infineon EVALFFXMR20KM1HDRTOBO1 Getting Started Manual

p u b l i c
EVAL-FFXMR20KM1HDR
Evaluation board description and getting started guide
The evaluation board at a glance
1.3

Main features

The EVAL-FFXMR20KM1HDR is an evaluation board for the EiceDRIVER™ 1ED38x0Mc12M gate drivers ICs to be
used together with our 62 mm 2 kV half-bridge module with CoolSiC™ MOSFET. The board is designed for easy
measurement and configuration of the gate driver and module parameters.
The main features of the board and gate driver include:
Half-bridge driver for 62 mm, 2kV modules with CoolSiC™ Trench MOSFET technology
•
Driver IC 1ED3890MC12M or 1ED3890MU12M (X3 digital) with I
•
Electrically and mechanically suitable for 62 mm, 2kV modules with CoolSiC™ Trench MOSFET technology
•
Negative voltage adjustment from -5 V to 0 V
•
Positive voltage adjustment for high switching frequencies
•
Proper PCB design to limit the PCB heating during operation
•
40 V absolute maximum output supply voltage
•
Booster stage to increase the sourcing and sinking gate current capability
•
Separate source and sink output for optimized gate driving
•
Adjustable clamp/clamp driver/ADC pin
•
I C bus for parameter adjustment, state and fault feedback, ADC measurements, and condition monitoring
• 2
Two precise V detection (DESAT
•
CE(sat)
individually adjustable trigger voltages, filter times
Two-level turn-off (TLTO) with adjustable slopes, plateau time, and plateau level
•
Selectable turn-off: hard turn-off and two-level turn-off
•
Adjustable soft turn-off after desaturation detection
•
Adjustable input filter
•
Hardware undervoltage lockout (UVLO) protection with hysteresis for the input side
•
Adjustable hardware UVLO with hysteresis for IGBTs and MOSFETs on both VCC2 and VEE2 rails with active
•
shutdown
Adjustable software UVLO for accurate supply voltage monitoring on both VCC2 and VEE2 rails
•
ADC measurement of internal parameters: supply voltages and internal temperature
•
Pin state reporting via I
•
Internal counters for DESAT or UVLO events
•
Gate driver operation at high ambient temperature up to 125°C with over-temperature shutdown at 160°C
•
(±10°C)
Tight IC-to-IC propagation delay matching (t
•
Undervoltage lockout protection with hysteresis for input and output side with active shutdown
•
High common-mode transient immunity CMTI = 200 kV/µs
•
Small space-saving DSO-16 fine-pitch package with large creepage distance (>8 mm)
•
Gate driver safety certification:
•
o UL 1577 recognized (planned) with V
IEC 60747-17/VDE 0884-11 approval (planned) with V
o
User guide
) circuits with fault output, adjustable leading-edge blanking time and
2
C and fault
2
PDD,max
C bus for parameter adjustment
2
= 30 ns)
= 6840 V (rms) for 1 s, V
ISO,test
= 1.767 kV (peak, reinforced)
IORM
7 of 24
= 5700 V (rms) for 60 s
ISO
Revision 1.0
2023-03-27