Samsung KS57C2308 Manual page 297

KS57C2308/P2308/C2316/P2316
Main Chip
Pin Name Pin Name
V
SDAT
LC1
V
SCLK
LC2
V
TEST
PP
RESET RESET
V / V V
DD SS DD
Table 16-2. Comparison of KS57P2308/P2316 and KS57C2308/C2316 Features
Characteristic
Program Memory
Operating Voltage (V
DD
OTP Programming Mode
Pin Configuration
EPROM Programmability
OPERATING MODE CHARACTERISTICS
When 12.5 V is supplied to the Vpp (TEST) pin of the KS57P2308/P2316, the EPROM programming mode is
entered. The operating mode (read, write, or read protection) is selected according to the input signals to the pins
listed in Table 16-3 below.
V Vpp
DD
(TEST)
5 V 5 V
12.5V
12.5V
12.5V
NOTE: "0" means low level; "1" means high level.
Table 16-1. Pin Descriptions Used to Read/Write the EPROM
Pin No.
10
11
(TEST)
16
19
/ V
12/13
SS
8 K/16 K-byte EPROM
)
1.8 V to 5.5 V
V = 5 V, V
DD
80 QFP
User Program 1 time
Table 16-3. Operating Mode Selection Criteria
REG/ Address
(A15-A0)
MEM
0 0000H
0 0000H
0 0000H
1 0E3FH
During Programming
I/O
I/O Serial data pin. Output port when reading and
input port when writing can be assigned as
Input/push-pull output port respectively.
I/O Serial clock pin. Input only pin.
I Power supply pin for EPROM cell writing
(indicates that OTP enters into the writing mode).
When 12.5 V is applied, OTP is in writing mode
and when 5 V is applied, OTP is in reading mode.
(Option)
I Chip initialization
Logic power supply pin. V
I
V during programming.
KS57P2308/P2316
(TEST) = 12.5 V
PP
R/
W
1
0
1
0
KS57P2308/P2316 OTP
Function
should be tied to +5
DD
KS57C2308/C2316
8 K/16-Kbyte mask ROM
1.8 V to 5.5 V
–
80 QFP
Programmed at the factory
Mode
EPROM read
EPROM program
EPROM verify
EPROM read protection
16-3