Max; Unit - ST STM32F103x6 Manual

STM32F103xx
5.3.9 Memory characteristics
Flash memory
The characteristics are given at T
Table 23.
Symbol
t
prog
t
ERASE
t
ME
I
DD
1. Values based on characterization and not tested in production.
Table 24.
Symbol
N
END
t
RET
1. Values based on characterization not tested in production.
Flash memory characteristics
Parameter
Word programming time
Page (1kB) erase time
Mass erase time
Supply current
Flash memory endurance and data retention
Parameter
Endurance
Data retention
= − 40 to 105 °C unless otherwise specified.
A
Conditions
= − 40 to +105 °C
T
A
= − 40 to +105 °C
T
A
= − 40 to +105 °C
T
A
Read mode
f = 72 MHz with
HCLK
2 wait states,
V = 3.3 V
DD
Write / Erase modes
f = 72 MHz,
HCLK
V = 3.3 V
DD
Power-down mode /
HALT,
V = 3.0 to 3.6 V
DD
Conditions
T = 85 °C
A
Electrical characteristics
(1)
Min Typ

Max

20 40
20 40
20 40
20
5
50
Value
(1)
Min Typ Max
10
1
30

Unit

µs
ms
ms
mA
mA
µA
Unit
kcycles
Years
39/67