ST STM32F103x6 Manual page 18

Electrical characteristics
Table 12. Maximum current consumption in Stop and Standby modes
Symbol Parameter
Supply current
in Stop mode
I
DD
Supply current
in Standby
(5)
mode
Backup domain
I
DD_VBAT
supply current
1. TBD stands for to be determined.
2. Typical values are measured at T
3. Data based on characterization results, tested in production at V
4. Values expected for next silicon revision.
5. To have the Standby consumption with RTC ON, add I
V is present the Backup Domain is powered by V
DD
30/67
Conditions
Regulator in Run mode,
Low-speed and high-speed internal
RC oscillators and high-speed
oscillator OFF (no independent
watchdog)
Regulator in Low Power mode,
Low-speed and high-speed internal
RC oscillators and high-speed
oscillator OFF (no independent
watchdog)
Low-speed internal RC oscillator and
independent watchdog OFF, low-
speed oscillator and RTC OFF
Low-speed oscillator and RTC ON
= 25 °C, V = 3.3 V,
A DD
DD_VBAT
supply).
DD
Typ
V / V
DD BAT
= 2.4 V
TBD
(4)
TBD
(4)
TBD
(4)
1
.
unless otherwise specified
, f max. and T
DD max HCLK
(Low-speed oscillator and RTC ON) to I
STM32F103xx
(1)
(2) (3)
Max
V /V T = T
DD BAT A A
= 3.3 V 85 °C 105 °C
24 TBD TBD
(4) (4)
14 TBD TBD
(4) (4)
2 TBD TBD
(4) (4)
1.4 TBD TBD
max (for other temperature.
A
Standby (when
DD
Unit
=
(4)
µA
(4)
(4)