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Guide to the Reader: Symbols, Acronyms and
Common Definitions
The Organic Field Effect Transistor (OFET) or Thin-Film Transistor (TFT) that is being characterised is
called Device Under Test (DUT). The equipment that is driving (controlling) and measuring the
output of the DUT is the Source Measurement Unit (SMU). The SMU drives the DUT by providing an
increasing voltage (or current) to the DUT (source function) and reading the output (measurement
function). The reading usually takes place after a delay time Δt, called settling time or dwell time, has
elapsed. The delay is introduced to allow the system (SMU +DUT) to settle before a measurement is
taken. When the driving voltage is increased from an initial value (V
SMU is said to sweep the DUT.
A transistor is characterised by applying a constant voltage to the gate and sweeping the drain, and
then by applying a constant voltage to the drain and sweeping the gate. Consequently, transistor
characterisation requires two SMUs or a double channel SMU working in parallel. Throughout this
User's guide, the SMU driving the gate and the drain will be denoted as GATE SMU and DRAIN SMU,
so to distinguish them from the Gate and Drain of the transistor.
Finally, both this manual and the SuperFACT numerical controls conform the SI (International
System) system of measurement, including the adoption of the SI prefixes for multiples and
submultiples of the original unit. For Example, 0.01V is written as 1 mV, see table below.
Ossila Ltd
SI prefix
Factor
-12
pico
10
-9
nano
10
-6
micro
10
-3
milli
10
Copyright © 2009-2015
) to a final value (V
Strat
Symbol
p
n
u
m
), the
End
94
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