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enabling
innovative electronics
shows a sub-linear dependence on V
manner can still be described (approximately) by the FET standard model. However, DUTs failing to
satisfy condition 3) must be discarded.
Important: The calculation of the transistor figures of merit are based on equations derived from the
FET standard model. For non optimised R&D devices, it is often the case that the hallmark features
of figure 13 are only approximately reproduced. The user must therefore always validate any
TFT/OFET figures of merit/data against the hypothesis under which the standard model is derived by
a simple visual inspection of the I-V curves of the DUT.
Transfer characteristic (TC)
If a constant drain-source voltage V
measured drain current I
short).
A transfer curve swept with a V
Characteristic. Conversely, if the V
operating in its saturation region, the corresponding TC is called Saturation Transfer Characteristic.
Figure 15 depicts an example of linear and saturation TC.
Figure 15. Linear (VDS=-5 V) and saturation (VDS=-80 V) field-effect transistor TC curves.
In linear regime, the drain current can be written as
Eq. 1
where is the mobility, C
valid under the conditions
Ossila Ltd
. A DUT satisfying conditions 1) and 2) in an approximate
DS
is applied to the drain, while the gate voltage is swept, the
DS
(V
) is called Transfer Characteristic (TC) of the transistor (transfer for
DS
GS
value belonging to the I-V linear region is called Linear Transfer
DS
is chosen such that the transistor, according to the I-V plot, is
DS
,
is the capacitance per unit area, and V
ox
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is the threshold voltage. Eq. 1 is
Th
36
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