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Constant. By selecting this option, the user sets the channel of every single device on the
substrates to be equal to a unique value inputted through the constant channel length
control located next to the ring selector.
Ossila-E323 or Ossila-E325 or Ossila-E327 loads the channel length configuration
corresponding to the equivalent Ossila variable-channel-length mask design.
Note: The Channel Length input entries are locked when Constant or any of the Ossila mask
configurations is loaded.
Width specifies the channel width (in cm) of the OFET/TFT, see figure 24.
Figure 24. Sketch of channel width of an OFET device
Capacitance is the capacitance per unit area, C
typical value of C
for a 300-nm thick Si0
0
Note C
depends on dielectric constant of the material and on the thickness of the dielectric; as
0
such, it can be written as
Eq. 26
Where
constant, while A and d are the overlap area and separation distance between two parallel
conductive plates, respectively, see figure 25. Experimentally, C
measuring C (the capacitance of the test capacitor) and then dividing by A.
Ossila Ltd
, in Farad/cm
0
diel ectric is 1.09∙10
2
F/m is the vacuum permittivity, k is the material-dependent dielectric
Figure 25. Capacitor diagram.
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2
, of the substrates dielectric. The
-8
2
F/cm
.
can be indirectly measured by
0
67
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