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enabling
innovative electronics
If E is the applied electrical field, the carrier speed v is given by the equation,
The unit of measure of the mobility is therefore cm
Saturation mobility: If the transistor is operated in saturation regime, the drain current is
Eq. 6
Eq. 6 means that when the transistor is ON (
voltage. To calculate the mobility, it is convenient to take the square root of
as
Eq. 7
Expressed in this manner, the (square root) of the TC current
gate voltage, and
can therefore be calculated exactly the same way as
,
Eq. 8
with
slope of
Gate-dependent mobility
Eqs. 5 and 7 are simply the equations of straight lines. This holds true as far as the mobility is an
independent function of the gate voltage in the range of validity of these two equations.
Conversely, if the mobility is gate-voltage dependent so must be the slope
more representing straight lines. In turn, equations 4 and 8 now read
Eq. 9
Eq. 10
In Eqs. 9 and 10 the slope of I
respect to the driving voltage V
Ossila Ltd
2
/( V∙s).
, with
.
.
(V
) has been replaced with the derivative of the drain current with
DS
GS
.
GS
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),
is a quadratic function of the gate
becomes a linearly function of the
and Eqs. 5 and 7 are no
, and rewrite Eq. 6
by inverting Eq. 7:
38
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