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Ossila FACT1 User Manual

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Ossila SuperFACT User Manual
Ossila Ltd
Copyright © 2009 - 2015

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Summary of Contents for Ossila FACT1

  • Page 1 Ossila SuperFACT User Manual Ossila Ltd Copyright © 2009 - 2015...

  • Page 2: Table Of Contents

    HECK CURRENT EXPERIMENT AND MODIFY DEFAULT DVANCED ETTINGS SUPERFACT UI FRONT PANELS ........................51 ......................51 DVANCED AND ACQUISITION SETTINGS UI ..................55 ELECT DEVICES TO MEASURE AND MEASUREMENT TYPE ....................60 EASUREMENT SETTINGS AND DEVICE PARAMETERS Ossila Ltd Copyright © 2009-2015...
  • Page 3 GATE DIELECTRIC III - PEDOT:PSS G ......................98 PPENDIX OUTINE IV - OTS P ........................99 PPENDIX REPARATION V - N ......................100 PPENDIX OTE ON TRANSIENT TIME VI - M ......................101 PPENDIX EASUREMENT LOWCHART Ossila Ltd Copyright © 2009-2015...

  • Page 4: Overview

    Ossila's FET substrate systems. Fabrication of devices can be as simple as spin-coating a material on a test-chip and loading it into the system. The automated test routines will then perform output and/or transfer sweeps and automatically calculate the key OFET/TFT parameters for each of the twenty devices on the substrate.

  • Page 5: Safety

    Do not leave devices with applied bias or current unattended as a power failure may result in board damage or device damage and potentially hazardous situations. The Ossila Multiplexer Measurement Unit was designed to be used with Drain (Channel B) and Gate(Channel A) input currents below 100 mA. The Ossila SuperFact Control Software automatically limits the input currents.

  • Page 6: System Components

    System Components Keithley 2612B system SMU Ossila Multiplexer Measurement Unit containing NI USB-6501 OEM, electronic controls, LED display and the signal board supporting POGO pin contacts (probes) for 20 devices and 8 gates. Desktop PC (Window®8.1 operative system) endowed with Core®i7 Intel microprocessors.

  • Page 7: Ec Declaration Of Conformity

    Three Power Supply Leads (Cords) for the monitor, computer and the SMU. EC Declaration of Conformity In line with directive 2004/108/EC of the European Parliament and of the Council and directive 2006/95/EC of the European Parliament and of the Council. Ossila Ltd Copyright © 2009-2015...
  • Page 8 Manufacturer Name: Ossila Limited Manufacturer Address: Kroto Innovation Centre, North Campus, Broad Lane, Sheffield, S3 7HQ Item: OFET testing rig for use with PXI system Model number: SuperFACT1 Software release: Super FACT v1.0 Specifications of product under harmonised standards: 2004/108/EC EN 61326-1:2006 Electrical equipment for measurement, control and laboratory use –...

  • Page 9: System Setup

    Nonetheless, the User must read carefully the following instructions in order to safely and efficiently exploit the performance and accuracy of the Ossila Multiplexer Measurement Unit. For explanation purposes, it is assumed the Ossila Ltd...

  • Page 10: Equipment Setup

    Do not operate any third party devices outside the operational range specified by their respective manufacturers. Ossila must not be held responsible for any injury or damage due to the non strict observance of the guideline outlined in the User Manuals of any third party equipment provided as part of SuperFACT.
  • Page 11 5) The Ossila Multiplexer Measurement Unit comes supplied with an earth plug; this does not supply power to the unit. Its use is advised in case your electrical installation is not equipped with Residual Current Devices (RCD).
  • Page 12 Figure 1. USB cable and coaxial cables (BNCs) connection: Channel A is the Gate; Channel B is the Drain. Ossila Ltd Copyright © 2009-2015...

  • Page 13: Superfact Software Installation

    You can now remove the both .rar and Volume folder. Important! Do not install this application on a target computer running Labview. If the target PC is already running Labview, you should run the executable instead. Contact Ossila at info@ossila.om for further information on installing and using the executable on a target computer already running Labview.
  • Page 14 After the re-installation is completed, delete the content of the new data folder with the exception of the file with extension .ddl  Copy all the files in the old data folder to the new data folder, again with the exception of the file with extension .ddl. Ossila Ltd Copyright © 2009-2015...
  • Page 15 (with the exception of the .ddl file), otherwise the application may stop working properly. Alternatively, before re-installing the application, delete the data folder to delete any previous reference to old experiment settings. Ossila Ltd Copyright © 2009-2015...

  • Page 16: Multiplexer Measurement Unit

    The Gate connections are provided by the bottom row, i.e. by the row nearest to the front panel of the Multiplexer Unit, see figure 2. It follows that the substrate must be placed (face-down) with the gate side nearest to the front panel, see figure 3. Ossila Ltd Copyright © 2009-2015...
  • Page 17 Figure 4. Location of Signal and Source Drain probes for Dev 16. The first column (on the left) therefore acts as the Source (ground), while the second is used to apply the desired voltage (Drain) to the transistors. This pattern (alternate Source and Drain columns) repeats itself for the successive six columns. Ossila Ltd Copyright © 2009-2015...
  • Page 18 Conversely (as the substrate is placed face down on the POGOS), the position of the probes is a flipped version of the device location on the substrate, see figure 5. Figure 5. Front panel of the Multiplexer Measurement Unit corresponds to location of the transistor on the substrate. Ossila Ltd Copyright © 2009-2015...

  • Page 19: Back Panel

    The back panel houses the coaxial connections for the Drain (channel B) and Gate (channel A), the USB B socket for the USB cable, and the earthing pin, see figure 6. There is also an earthing cable to earth the chassis. Figure 6. Back panel of the Multiplexer Measurement Unit. Ossila Ltd Copyright © 2009-2015...

  • Page 20: Safety/Operational Considerations

    Due to this reason, and in order to avoid any signal degradation, there is no safety fuse in the signal paths. If not using the Ossila SuperFACT Control Software, ensure the Drain (Channel B) and Gate (Channel A) currents and voltages signals are always limited to 100 mA and ±100 V, respectively.
  • Page 21 Note If the experimental set-up is such that the signal passes through a BNC-to-BNC connectors (for example, GloveBox BNC feedthrough ), it is recommended that the ground of the connectors should be connected together with a wire to minimise measurement distortion. Ossila Ltd Copyright © 2009-2015...

  • Page 22: Specifications

    Gate ( Channel A) Leakage Current ( One device on, Gates G1 and G2 on): typ 100 pA, max < 200 pA  Drain ( Channel B) Gate ( Channel A) Transfer Leakage Current ( One device on, Gates G1 and G2 on): typ 200 pA, max < 300 pA Ossila Ltd Copyright © 2009-2015...
  • Page 23 Maximum input Gate ( Channel A) Current: 100 mA Software driver The Ossila Multiplexer Measurement Unit is controlled by a NI USB 6501 OEM card. The card is compatible with Linux, Mac OS, Pocket PC and Windows operative system and it can be programmed by using a variety of languages, such as: ...

  • Page 24: Ni 6501 Oem Outputs

    G8) are addressed using an exclusive (single) DIO channel. Additionally, two DIO channels are reserved to control the Security Bits. See section Digital DIO Lines below for more details instruction son how to programme the Multiplexer. Ossila Ltd Copyright © 2009-2015...

  • Page 25: Digital Dio Lines

    Selects Dev 8 and 13 P1.7 Selects Dev 9 and 14 P2.0 Selects G5 P2.1 Selects G8 P2.2 Selects G7 P2.3 Selects G4 Port 2 Output P2.4 Selects G3 P2.5 Selects G6 P2.6 Selects G1 P2.7 Selects G2 Ossila Ltd Copyright © 2009-2015...
  • Page 26 Users with the information necessary to install, test and maintain the accuracy level of the measurement system. Accordingly, this section is exclusively intended for Ossila Multiplexer Measurement Unit users and any other use is explicitly forbidden.

  • Page 27: Stress-Biased Measurement

    3. Familiarise with the tool bar commands on the central subpanel of MAX, see figure 14. 4. Use Reset to reset the hardware and Self-Test to test the hardware. Figure 9. SwitchControl (NI USB 6501) MAX front panel. Stress-Biased Measurement Ossila Ltd Copyright © 2009-2015...
  • Page 28 Table 3. Table showing pairs of Devices (shown with the same colour) which can be switched off together when the Multiplexer Measurement Unit is used as a Lifetime Tester. DEV 1 DEV 6 DEV 11 DEV 16 DEV 2 DEV 7 DEV 12 DEV 17 Ossila Ltd Copyright © 2009-2015...

  • Page 29: Hardware Configuration

    NI MAX (Measurement& Automation Explorer) If MAX is not yet installed, please download and install it. MAX is freely available at www.ni.com; registration to NI website may be required to download NI applications and drivers. Ossila Ltd Copyright © 2009-2015...
  • Page 30 Navigate to the two SMU units (NI PXI 4132) and rename them as “SMUA” (unit in slot 2) and “SMUB” (unit in slot 3). These alias names are case sensitive.  Save the new settings Ossila Ltd Copyright © 2009-2015...

  • Page 31: Operation Mode

    Alternatively, if a manual test fixture is used instead (such as probe station, manual test board, etc), SuperFACT can be set to acquire a single device at the time. These two modes of operation are referred to as Automatic Mode and Manual Mode, respectively. Ossila Ltd Copyright © 2009-2015...

  • Page 32: Acquisition Mode

    In automatic mode, the Ossila multiplexor “SwitchControl20” must be connected to the host PC via a USB cable, otherwise error code 5040 will be generated an no acquisition can start.

  • Page 33: A Brief Introduction To Field Effect Transistors

    The minimum gate voltage required to form the drain-source channel is the threshold voltage V (see figure 13.) Ossila Ltd Copyright © 2009-2015...
  • Page 34 DS,cosnt Physics of Semiconductor Devices, 2 Edition, Sze, S.M., Wiley Interscience, 1981. Organic Field-Effect Transistors, Zhenan Bao, Jason Locklin, CRC Press, 2007. Organic Electronics: Materials, Manufacturing, and Applications, Hagen Klauk, John Wiley & Sons, 2006. Ossila Ltd Copyright © 2009-2015...

  • Page 35: Output Characteristic (I-V)

    I Sweeping is a common jargon used to describe a measurement where an initial voltage V (or current) is start applied to the DUT, and then gradually increased till a final value V is reached. Ossila Ltd Copyright © 2009-2015...

  • Page 36: Transfer Characteristic (Tc)

    In linear regime, the drain current can be written as Eq. 1 where  is the mobility, C is the capacitance per unit area, and V is the threshold voltage. Eq. 1 is valid under the conditions Ossila Ltd Copyright © 2009-2015...
  • Page 37 Eq. 16. Here, the extra index i is added to underline that (I ) are experimental quantities, with V the nth DS,i DS,i DS,I drive voltage and I the corresponding nth measured current. DS,I Ossila Ltd Copyright © 2009-2015...

  • Page 38: Gate-Dependent Mobility

    In turn, equations 4 and 8 now read Eq. 9 Eq. 10 In Eqs. 9 and 10 the slope of I ) has been replaced with the derivative of the drain current with respect to the driving voltage V Ossila Ltd Copyright © 2009-2015...

  • Page 39: Transfer Characteristic Curves: Ideal And Real Behaviour

    For example, for inorganic FETs complying with TTL Refer to references 6, 7 and 8 for more detailed analysis of the mathematical relationship between I applied voltages and FET intrinsic material properties. Ossila Ltd Copyright © 2009-2015...

  • Page 40: Threshold Voltage: Second Derivative Method

    Without loss of generality, we have assumed that the slope α is gate voltage independent. For an ideal FET with constant slope over the ON region, the second derivative of the transfer characteristic with respect to the gate voltage is a Delta of Dirac. Ossila Ltd Copyright © 2009-2015...

  • Page 41: Figures Of Merit

    Two additional figures of merit that are not calculated by SuperFACT are the ON/OFF frequency (f) and the subthreshold swing (S). render Eq. 16 Eq. 17 A. Ortiz-Conde et al A review of recent MOSFET threshold voltage extraction methods, Microelectronics Reliability, 2002, 42 583–596. Ossila Ltd Copyright © 2009-2015...

  • Page 42: Well-Behaved Transistor And Validation Of The Figures Of Merit

    ): large voltage always means larger drain current. For p-type transistor, where both voltage and current GS,2 are negative, these relations hold true if the inequality symbol is reversed. These derivatives, apart from a multiplicative factor, are the mobility of the transistor, see Eqs. 4 and 8. Ossila Ltd Copyright © 2009-2015...

  • Page 43: Quick Start

    To start an acquisition, the user needs first to configure the SMU, set the multiplexer to sweep the required DUTs and, finally, enter the sweep parameters. These instructions are inputted through three configuration and setting User Interface (UI) front panels. See SuperFACT UI Front Panels a detailed description of each. Ossila Ltd Copyright © 2009-2015...
  • Page 44 Follow the set of instructions below to programme a simple finite measurement acquisition of a standard high-density Ossila substrate. 1. On the main front panel, click on Add Settings to open the “Advanced SMU and Acquisition Settings” UI.
  • Page 45 Folder and Time Stamp buttons located next to the File Name input. 8. Press Apply to proceed to the Measurement Settings and Device Parameters UI Figure 19. Select Devices to Measure and Measurement Type UI. Ossila Ltd Copyright © 2009-2015...
  • Page 46 13. Enter the maximum leakage current, in Ampere, using Max Gate Current. Note: If the measured gate (leakage) current is greater than Max Gate Current, SuperFACT will stop the DUT acquisition and start the acquisition of the successive device, if any. Ossila Ltd Copyright © 2009-2015...
  • Page 47 V , respectively. DS (Linear) DS (Sat) 24. Enter Delay and Current Limit for the DRAIN SMU. 25. Select the FET type = n-type for n type FET or p-type for p-type FET. Ossila Ltd Copyright © 2009-2015...

  • Page 48: Data Analysis

    Partition Method options of the Extrapolation Method control. The Linear Fit Extrapolation option of the Threshold Voltage control will be automatically selected and locked. See Mobility Computation for a detailed explanation of the mobility computation algorithm. Ossila Ltd Copyright © 2009-2015...

  • Page 49: Save Experiment Settings

    A new (not yet saved) experiment can be committed by selecting the option Commit on the Measurement Settings and Device Parameters UI. Note: A committed, but not saved, experiment will be lost when the application is closed. Ossila Ltd Copyright © 2009-2015...

  • Page 50: Start An Acquisition

    The Default setting will be loaded by pressing the Load Default button. Note: Each experiment is associated with its own set of Advanced and SMU Settings, and these are automatically loaded into memory with the experiment. Ossila Ltd Copyright © 2009-2015...

  • Page 51: Superfact Ui Front Panels

    SuperFACT operation modes. System settings: E-mail settings This enables automatic e-mailing functionally whereby errors and failure messages are e-mailed to the e-mail address specified in Sender’s Email Address. Available in Lifetime mode only. Ossila Ltd Copyright © 2009-2015...
  • Page 52 TC: Initial Delay Time is the extra settling time the GATE SMU waits after applying the target voltage when acquiring TC curves, see diagram in figure 21. TC: Initial Delay Time is applied only for the first sweep data Ossila Ltd Copyright © 2009-2015...
  • Page 53 Linear Fit: R-squared specifies the minimum R-squared (goodness of fit) the linear fit must satisfied in order for the mobility to be returned without a warning flag. Min allowed value 0.90; Max allowed value 1 Ossila Ltd Copyright © 2009-2015...
  • Page 54 In this manner, especially when multiple users have access to the measurement equipment, it will be easier to guarantee consistency between similar experiments by loading the same advanced/SMU settings. Ossila Ltd Copyright © 2009-2015...

  • Page 55: Select Devices To Measure And Measurement Type Ui

    Lifetime enables SuperFACT continuous measurement mode whereby the user can set infinitely repeating acquisition cycles. Tip: Select Lifetime in conjunction with Sweep Bias to combine continuous and stress biased measurements. Ossila Ltd Copyright © 2009-2015...
  • Page 56 Match: only the two gates belonging to the same column as the DUT are engaged, while the other gate pogos are kept idle. UserM: the same as Match, but with the gate pogo(s) to engaged during measurement manually selected by the user. Ossila Ltd Copyright © 2009-2015...
  • Page 57 Tip: Use the option Edge to measure TFT/OFET fabricated with Ossila masks or with equivalent masks, i.e. with single-layer dielectric substrates whose gate pads are located on the bottom left and right corners. Use Match or UserM to characterise transistor architecture defined by separate gate dielectric layers, one for each device column.
  • Page 58 Excel instance in background mode. This instance may remain open if SuperFACT fails to close it because, for example, an execution error has occurred. If Excel is still open in the background, SuperFACT will try to close this instance and ask the user to restart the acquisition. Ossila Ltd Copyright © 2009-2015...
  • Page 59 FileName_Lin_1 contains the time series of the FET/TFT figures of merit calculated with the device in linear regime (one file per device), FileName_Sat_1. Same as above, but with the figures of merit calculated with the transistor operating in saturation regime, FileName_Overhead_1 records the experiment settings. Ossila Ltd Copyright © 2009-2015...

  • Page 60: Measurement Settings And Device Parameters

    , is measured at the beginning of each measurement Internal session and its value is subtracted to I according to Eq1. Load On: the internal current is measured for any acquisition point and its value subtracted to the corresponding I Load Ossila Ltd Copyright © 2009-2015...
  • Page 61 µS on a 1 V step and a load of 50 percent of the current range setting. When the capacitance of Ossila SuperFACT is taken into account, and for short BNC cables (i.e.≤ 1 m), the Delay for fast inorganic transistor can be set at 1 ms for 1 V step or lower.
  • Page 62 1% of the drain current I ). Max Gate Current is disabled if its value matches Current Limit. IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials; IEEE 1620-2008. Ossila Ltd Copyright © 2009-2015...
  • Page 63 IV curves. For any constant gate voltage V defined in the Gate control panel, the I-V output characteristics curve I ) is acquired GS,I in correspondence of the following Drain voltages Ossila Ltd Copyright © 2009-2015...
  • Page 64 For Keithley series 26XX dual channel series, the SMU alias name must be KeithleyO, while for NI PXI 4132, the name is SMUA. Channel is the SMU channel used for output/input operation. Input a for Keithley 26XX dual channel series and 0 for NI PXI 4132. Ossila Ltd Copyright © 2009-2015...
  • Page 65 For Keithley series 26XX dual channel series, the SMU alias name must be KeithleyO, while for NI PXI 4132, the name is SMUB. Channel is the SMU channel used for output/input operation. Input b for Keithley 26XX dual channel series and 0 for NI PXI 4132. Ossila Ltd Copyright © 2009-2015...
  • Page 66 Channel length ring selector allows the user to select the appropriate substrate (channel length) layout. The available options are: User Selection. The User directly input the channel length using the Channel Length table. This option allows to individually enter the DUTs channel length, one at the time. Ossila Ltd Copyright © 2009-2015...
  • Page 67 Ossila-E323 or Ossila-E325 or Ossila-E327 loads the channel length configuration corresponding to the equivalent Ossila variable-channel-length mask design. Note: The Channel Length input entries are locked when Constant or any of the Ossila mask configurations is loaded. Width specifies the channel width (in cm) of the OFET/TFT, see figure 24.
  • Page 68 2. Derivative Method. The mobility is computed by differentiating the drain current I with respect to the gate voltage V , i.e. the Cartesian x-axis is the voltage axis Ossila Ltd Copyright © 2009-2015...
  • Page 69 , select the At Max V_DS option from the drop-down menu of the GS End ON current ring selector. To select a different value for I , select the User option instead and the enter V using the V input. Ossila Ltd Copyright © 2009-2015...
  • Page 70 (linear fit), while the latter is the method that is employed by the application to pre-process and handle the data to fit. The drain current is already smoothed during the pre-processing stage of the data analysis routine, and Derivative Algorithm control has no effect on this stage. Ossila Ltd Copyright © 2009-2015...
  • Page 71 , flags 3) and 4) enables SuperFACT to automatically calculate the appropriate ] for each DUT. Start For a detailed explanation of the panel control Advanced Measurement: Lifetime/Bias, refer to the chapter Lifetime and Stress Biased Acquisition below. Ossila Ltd Copyright © 2009-2015...

  • Page 72: Lifetime And Stress Biased Acquisition

    Lifetime and Stress Bias to programme a lifetime combined with stress biased. Proceed to select the measurement type (TC and or IV) and the device to measure etc. as for a standard acquisition. Select Apply to open the Measurement Settings and Device Parameters UI. Ossila Ltd Copyright © 2009-2015...
  • Page 73 Important: If a total current measured during stress biased exceeds 10 mA, SuperFACT will return error code 5600 and the acquisition will be terminated. Tip: Introduce an idle time between two consecutive acquisition cycles to reduce the amount of data produced during a lifetime experiment Ossila Ltd Copyright © 2009-2015...

  • Page 74: Mobility Computation

    ) is a statistic ranging from 0 to 1 which assume the value R = 1 in case the linear fit exactly describes the relation between the data points, and R = 0 if no (linear) relation between current and voltage exists. Ossila Ltd Copyright © 2009-2015...

  • Page 75: Partition Method

    Figure 26. Linear Fit (Red, solid line) and Upper and Lower Bound defining the confidence interval (dashed blue line) for two subsets of input (Gate Voltages) and measured point (Drain Current) for TC in Saturation Mode. Ossila Ltd Copyright © 2009-2015...
  • Page 76 Figure 27. Comparison between the field effect saturation mobility calculated from the modified Eq. 9 (Linear Fit), (BW, TP) using two different numerical derivative methods. For each data set, the saturation mobility is plotted as function of the mid-point interval Ossila Ltd Copyright © 2009-2015...

  • Page 77: Mobility Algorithms: Interval Of Validity, Issues And Caveats

    Clearly at the R&D stage it may not be known yet the operational range of the new material or device architecture. Ossila Ltd Copyright © 2009-2015...
  • Page 78 Eq. 31 In case of current degradation, the same considerations as for the linear case apply. The interval of validity for the saturation mode figure of merits calculates is therefore defined as, see figure 29, Ossila Ltd Copyright © 2009-2015...
  • Page 79 Flag 1: User. The User manually enter the validity interval [V ], and the mobility is calculated Start, only over this interval. This option is useful when all working DUTs, on the substrates, show similar transfer curves whose features are broadly known a priori. Ossila Ltd Copyright © 2009-2015...
  • Page 80 If the mobility peak does not exist, it locates the maximum of the derivative (which should be located at V ) and then GS End analyses the behaviour of to located V start Ossila Ltd Copyright © 2009-2015...
  • Page 81 This page is intentionally left blank Ossila Ltd Copyright © 2009-2015...
  • Page 82 [-20, -60] V, SuperFACT discarded this device since the R-squared condition is not fulfilled (R-squared<<0.90) TC smoothed curves are the measured transfer curves (raw data) filtered (smoothed) by the recursive application of the Savitzky-Golay filter Ossila Ltd Copyright © 2009-2015...
  • Page 83 The table below gives a set of recommendations on the use of the Mobility flags. In this table, well- defined behaviour DUTs are the TFTs/OFETs whose linear and saturation transfer characteristic can be described using Eqs. 3 and 6, respectively, see figure 14. Ossila Ltd Copyright © 2009-2015...
  • Page 84 : The interval of validity is determined before starting the acquisition and remains the same for each DUT. Unless the DUTs have similar behaviour (interval of validity) and this is already (roughly) known to the user, the chosen [V ] could not match the actual interval of validity. Start Ossila Ltd Copyright © 2009-2015...
  • Page 85 The mobility plot will turn dark red if both linear and saturation mobility are accompanied with a warning. Ossila Ltd Copyright © 2009-2015...

  • Page 86: Measurement And Accuracy

    The transfer equation describes how a nominal output x is sourced by the SMU. For an ideal SMU b=0 and m=1 and therefore y=x. NI DC power Supply SMU Help. Ossila Ltd Copyright © 2009-2015...
  • Page 87 = 1.56 μA Therefore, the current and its uncertainty are I = 2mA ± 1.56 μA. Ossila SuperFACT automatically selects the appropriate measurement range depending on the PXI Current Limit chosen by the User. For each current acquisition chose the appropriate Current Limit, i.e. a value that is greater than the maximum (expected) current under measurement but not greater than the lowest SMU current range required for the measurement.

  • Page 88: Temperature Effects On Smu Accuracy

    The correction factor due to the temperature is Temp_Accuracy = Accuracy x (Tempo)/100 *|Calibration_temp – Meas_Temperature| = 15 x 0.15 x 10 = 22.5 mV. The PXI output is then given by V = 20 V ± 37.5 mV. Ossila Ltd Copyright © 2009-2015...

  • Page 89: List Of Symbols And Acronyms

    ): Current measured at V =i×ΔV , with i = {0,1,2...,Measurements Points}; the same for the GS,i GS,i GS,i drain current. I-V curves: Output Characteristic curves I SMU: Source Measurement Units TC: Transfer Characteristic I DUT: Device Under Test Ossila Ltd Copyright © 2009-2015...

  • Page 90: Superfact Troubleshooting

    Action Required: None. These two file are rewritten every time that an error on a new setting is applied and measurement is started. If the error persists, contact the technical support at Ossila at info@ossila.com.  SuperFACT opens but it returns the error message 5040 Action Required: Check the USB connection PC-Multiplexer.
  • Page 91 Close the file, restart SuperFACT and try to load a different experiment. If the problem persists contact technical support at info@ossila.com.  SuperFACT opens, it performs the measurement cycle, the output is constituted by noise current. Possible causes for this are:...
  • Page 92 Figure 19. Coaxial cable: internal details Figure 16. Coaxial cable: Connection to backshell  SuperFACT opens, runs and acquires measurement properly but, suddenly, it stops. Check the content of the error message (if any) and take action accordingly. Ossila Ltd Copyright © 2009-2015...
  • Page 93 Ossila SuperFACT. o One or more cables are inadvertently unplugged. Depending on which connection is unplugged, Ossila SuperFACT may stop with an error message or acquire the background noise only. Action Required: Refer to the Required Actions for the same issues detailed above.

  • Page 94: Guide To The Reader: Symbols, Acronyms And Common Definitions

    System) system of measurement, including the adoption of the SI prefixes for multiples and submultiples of the original unit. For Example, 0.01V is written as 1 mV, see table below. SI prefix Factor Symbol pico nano micro milli Ossila Ltd Copyright © 2009-2015...

  • Page 95: Warranty Information And Contact Details

    Warranty Information and Contact Details Ossila warrants that: (a) Ossila has (or will have at the relevant time) the right to sell the Products; (b) the Customer shall enjoy quiet possession of the Products; (c) the Products correspond to any description of the Products supplied by Ossila to the Customer;...

  • Page 96: Appendices

    Optional 5 mins sonication in hot 10% NaOH and 2x cold water dump rinse  Storage in cold DI water. Once placed in DI water the substrates are stable for at least 24 hours (and probably much more). Ossila Ltd Copyright © 2009-2015...

  • Page 97: Pmma Gate Dielectric

     Solutions stable for at least several weeks. The thickness of the resulting layer should be around 1200 nm and we generally obtain a film uniformity of better than 10%. Ossila Ltd Copyright © 2009-2015...

  • Page 98: Pedot:pss Gate Routine

    Spin for ~2 mins until fully dry  Solutions stable for several days but resistivity increased over time. Using the Ossila ITO OFET substrates this should result in a resistance between the two cathode connection terminals of around 250 Ω. Ossila Ltd...

  • Page 99: Ots Preparation

    Left under ambient conditions for 20 mins.  2x dump rinses in cyclohexane  Baked on hotplate under ambient conditions at 150 C The above recipe should result in a water contact angle of around 110 °C or greater. Ossila Ltd Copyright © 2009-2015...

  • Page 100: Appendixv - Note On Transient Time

    Therefore, for each acquired data point Delay must be 9/10 time larger than the time constant RC. For Ossila FACT1, with two meter-long BNC cable, typical value of resistance and capacitance are R = 1.4 Ω and C = 250 pF, which gives negligible time constant τ.

  • Page 101: Appendix Vi - Measurement Flowchart

    Acquire I Acquire I DS,i DS,i GS,i DS,i DS,k GS,k i > N? k > L? j > M? r = 2? Log CC data Log TC data Next FET? device Next FET? device STOP Ossila Ltd Copyright © 2009-2015...

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