Pedot:pss Gate Routine - Ossila FACT1 User Manual

enabling
innovative electronics
Appendix III - PEDOT:PSS Gate Routine
The use of a solution processed gate enables rapid fabrication without the use of costly and slow
vacuum deposition equipment. However, any solution processed gate also needs to be solvent
compatible with the gate-insulator (and preferably organic semiconductor as well). It should also
have the right wetting and film forming properties to enable good even substrate coverage.
We have found that high conductivity formulations of PEDOT:PSS with additives to control the
wetting and drying process give good performance with the below recipe working well.
Solution components:
Component
PH1000 PEDOT:PSS
N-Methyl-2-pyrrolidone
Triton X-100
Isopropyl Alcohol
Fabrication Routine:

Mix the above components in the given order using a magnetic stir-bar but not heated
(PEDOT:PSS will phase separate if heated above 40 C).

Spin coat using a 50 ul dynamic dispense at 4000 RPM

Spin for ~2 mins until fully dry

Solutions stable for several days but resistivity increased over time.
Using the Ossila ITO OFET substrates this should result in a resistance between the two cathode
connection terminals of around 250 Ω.
Ossila Ltd
Order to add
1
2
3
4
Copyright © 2009-2015
% by weight
42.5
2.5
1
54 %
98