AC Switching Characteristics
SRAM Read Cycle
Parameter
Cypress
Alt
Parameter
t
t
ACE
ELQV
[7]
t
t
t
RC
AVAV,
ELEH
[8]
t
t
AA
AVQV
t
t
DOE
GLQV
[8]
t
t
OHA
AXQX
[9]
t
t
LZCE
ELQX
[9]
t
t
HZCE
EHQZ
[9]
t
t
LZOE
GLQX
[9]
t
t
HZOE
GHQZ
[6]
t
t
PU
ELICCH
[6]
t
t
PD
EHICCL
Switching Waveforms
Notes
7. WE and HSB must be HIGH during SRAM READ cycles.
8. Device is continuously selected with CE and OE both Low.
9. Measured ±200 mV from steady state output voltage.
10. HSB must remain high during READ and WRITE cycles.
Document Number: 001-06400 Rev. *I
Description
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold After Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
Figure 5. SRAM Read Cycle 1: Address Controlled
Figure 6. SRAM Read Cycle 2: CE and OE Controlled
25 ns
35 ns
Min
Max
Min
Max
25
35
25
35
25
35
12
15
3
3
3
3
10
13
0
0
10
13
0
0
25
35
[7, 8, 10]
[7, 10]
CY14B101L
45 ns
Unit
Min
Max
45
ns
45
ns
45
ns
20
ns
3
ns
3
ns
15
ns
0
ns
15
ns
0
ns
45
ns
Page 9 of 18
[+] Feedback
Need help?
Do you have a question about the CY14B101L and is the answer not in the manual?