Cypress AN20639 Application Note

Comparison between cy14b256l and stk14c88-3 nvsram

Advertisement

Application Note Abstract

This application note compares the CY14B256L (0.25 μm) and the STK14C88-3 (0.8 μm) devices and presents the results.

Introduction

CY14B256L and STK14C88-3 are both 256K (32K x 8), 3V
nvSRAMs in two different technologies, 0.25 μm and 0.8 μm
respectively. These parts are functionally similar and can be
used in the same applications. However there are differences
in parameters, which should be considered when replacing
one part with the other.
The specifications in the data sheets of CY14B256L (0.25
μm) and STK14C88-3 (0.8 μm) are compared.
the differences between these two devices. This comparison
is not intended to be comprehensive, because there are sub-
tle differences that are not relevant in most applications.

Table 1. Comparison Table

Specification
Endurance
Retention
DC Electrical Characteristics
Vcc
Icc1
Icc3
Icc4
V
IH
1
[
]
Vcap
C
in
AC Switching Characteristics
t
OHA
t
LZCE
t
LZWE
Note
1.
STK14C88-3 applications usually specify the use of 68 µF or 100 µF capacitors, which fall within the range of the CY14B256L device.
November 11, 2008
Table 1
lists
CY14B256L (35 nsec)
200,000 cycles
20 year
2.7V min
3.6V max
55 mA max
10 mA max
3 mA max
2.0V min
Vcc + 0.3V max
17 µF min
120 µF max
7 pF max
3 ns min
3 ns min
3 ns min
Document No. 001-20639 Rev. *C
Comparison between CY14B256L
and STK14C88-3 nvSRAM
Associated Part Family: CY14B256L and STK14C88-3
Associated Application Notes: None
Most applications use autostore and autorecall features of
nvSRAM. To simplify the comparison, all electrical parame-
ters which may affect the application performance directly or
indirectly are considered. Designers must consider these dif-
ferences, and if necessary do appropriate changes in their
design.
Only those specifications that differ between CY14B256L
(0.25 μm) and STK14C88-3 (0.8 μm) nvSRAM are listed in
Table
1. These specifications may cause functional issues
when replacing one part with the other.
STK14C88-3 (35 nsec)
3.0V min
2.2V min
68 µF min
5 ns min
5 ns min
5 ns min
AN20639
Author: Shivendra Singh
Associated Project: No
1,000,000 cycles
100 year
3.6V max
52 mA max
9 mA max
2 mA max
Vcc + 0.5V max
220 µF max
5 pF max
1
[+] Feedback

Advertisement

Table of Contents
loading
Need help?

Need help?

Do you have a question about the AN20639 and is the answer not in the manual?

Questions and answers

Summary of Contents for Cypress AN20639

  • Page 1 120 µF max 68 µF min 7 pF max 5 ns min 5 ns min 5 ns min Document No. 001-20639 Rev. *C AN20639 Author: Shivendra Singh Associated Project: No STK14C88-3 (35 nsec) 1,000,000 cycles 100 year 3.6V max 52 mA max...
  • Page 2 In most applications you can directly substitute the CY14B256L for the STK14C88-3 nvSRAM. November 11, 2008 CY14B256L (35 nsec) 20 ms max 12.5 ms max 2.65V max Document No. 001-20639 Rev. *C AN20639 STK14C88-3 (35 nsec) 550 µs max 10 ms max 2.7V min 2.95V max [+] Feedback...
  • Page 3 Description of Change New application note Changed title Minor change Changed title. Updated content to reflect change in part number Document No. 001-20639 Rev. *C AN20639 Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone: 408-943-2600 Fax: 408-943-4730 http://www.cypress.com...

This manual is also suitable for:

Cy14b256lStk14c88-3

Table of Contents