Features
20 ns, 25 ns, and 45 ns Access Times
■
Internally organized as 1024K x 8 (CY14B108L) or 512K x 16
■
(CY14B108N)
Hands off Automatic STORE on power down with only a small
■
Capacitor
®
STORE to QuantumTrap
nonvolatile elements initiated by
■
Software, device pin, or AutoStore
RECALL to SRAM initiated by Software or power up
■
Infinite Read, Write, and RECALL Cycles
■
200,000 STORE cycles to QuantumTrap
■
20 year data retention
■
Single 3V +20%, -10% operation
■
Commercial and Industrial Temperatures
■
48-ball FBGA and 44-pin and 54-pin TSOP-II packages
■
Pb-free and RoHS compliant
■
Logic Block Diagram
Note
1. Address A
- A
for x8 configuration and Address A
0
19
2. Data DQ
- DQ
for x8 configuration and Data DQ
0
7
3. BHE and BLE are applicable for x16 configuration only.
Cypress Semiconductor Corporation
Document #: 001-45523 Rev. *B
PRELIMINARY
8 Mbit (1024K x 8/512K x 16) nvSRAM
®
on power down
[1, 2, 3]
A
R
0
A
O
1
A
W
2
A
3
A
D
4
E
A
5
C
A
6
O
A
7
D
A
8
E
A
17
R
A
18
A
19
DQ
0
DQ
1
DQ
2
DQ
3
I
DQ
4
N
DQ
P
5
U
DQ
6
T
DQ
B
7
U
DQ
8
F
DQ
F
9
E
DQ
10
R
DQ
S
11
DQ
12
DQ
13
DQ
14
A
9
DQ
15
- A
for x16 configuration.
0
18
- DQ
for x16 configuration.
0
15
•
198 Champion Court
Functional Description
The Cypress CY14B108L/CY14B108N is a fast static RAM, with
a nonvolatile element in each memory cell. The memory is
organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits
each.
The
embedded
QuantumTrap technology, producing the world's most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data resides in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
V
CC
Quatrum Trap
2048 X 2048 X 2
POWER
CONTROL
STORE
RECALL
STORE/RECALL
CONTROL
STATIC RAM
ARRAY
2048 X 2048 X 2
SOFTWARE
DETECT
COLUMN I/O
COLUMN DEC
A
A
A
A
A
A
A
10
11
12
13
14
15
16
•
San Jose
CY14B108L, CY14B108N
nonvolatile
elements
V
CAP
HSB
A
- A
14
2
OE
WE
CE
BLE
BHE
,
CA 95134-1709
•
408-943-2600
Revised March 19, 2009
incorporate
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