Cypress CY14B101L Specification Sheet

1 mbit (128k x 8) nvsram

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Features
25 ns, 35 ns, and 45 ns access times
Pin compatible with STK14CA8
Hands off automatic STORE on power down with only a small
capacitor
STORE to QuantumTrap™ nonvolatile elements is initiated by
software, hardware, or AutoStore™ on power down
RECALL to SRAM initiated by software or power up
Unlimited READ, WRITE, and RECALL cycles
200,000 STORE cycles to QuantumTrap
20 year data retention at 55°C
Single 3V +20%, –10% operation
Commercial and industrial temperature
32-pin (300 mil) SOIC and 48-pin (300 mil) SSOP packages
RoHS compliance
Logic Block Diagram
A
5
A
6
A
7
A
8
A
9
A
12
A
13
A
14
A
15
A
16
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
Cypress Semiconductor Corporation
Document Number: 001-06400 Rev. *I

Functional Description

The Cypress CY14B101L is a fast static RAM with a nonvolatile
element in each memory cell. The embedded nonvolatile
elements incorporate QuantumTrap technology producing the
world's most reliable nonvolatile memory. The SRAM provides
unlimited read and write cycles, while independent, nonvolatile
data resides in the highly reliable QuantumTrap cell. Data
transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power down. On
power up, data is restored to the SRAM (the RECALL operation)
from the nonvolatile memory. Both the STORE and RECALL
operations are also available under software control.
QuantumTrap
1024 x 1024
STORE
RECALL
STATIC RAM
ARRAY
1024 X 1024
COLUMN IO
COLUMN DEC
A
A
A
A
A
A
A
0
1
2
3
4
10
11
198 Champion Court
1 Mbit (128K x 8) nvSRAM
V
V
CC
CAP
POWER
CONTROL
STORE/
HSB
RECALL
CONTROL
SOFTWARE
DETECT
,
San Jose
CA 95134-1709
CY14B101L
-
A
A
15
0
OE
CE
WE
408-943-2600
Revised January 30, 2009
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Summary of Contents for Cypress CY14B101L

  • Page 1: Functional Description

    Document Number: 001-06400 Rev. *I 1 Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while independent, nonvolatile data resides in the highly reliable QuantumTrap cell.
  • Page 2: Pin Definitions

    Power Supply AutoStore Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM to nonvolatile elements. No Connect No Connect. This pin is not connected to the die. Document Number: 001-06400 Rev. *I Description CY14B101L Top View (not to scale) Page 2 of 18 [+] Feedback...
  • Page 3: Device Operation

    Device Operation The CY14B101L nvSRAM is made up of two functional compo- nents paired in the same physical cell. These are an SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a standard fast static RAM. Data in the...
  • Page 4: Data Protection

    V HRECALL If the CY14B101L is in a WRITE mode (both CE and WE are low) at power up after a RECALL or after a STORE, the WRITE is inhibited until a negative transition on CE or WE is detected. This protects against inadvertent writes during power up or brown out conditions.
  • Page 5: Best Practices

    Customers that want to use a larger V to make sure there is extra store charge should discuss their size selection with Cypress to understand any impact on the Vcap voltage level at the end of a t CY14B101L value because value period.
  • Page 6 1. The six consecutive address locations are in the order listed. WE is HIGH during all six cycles to enable a nonvolatile cycle. 2. While there are 17 address lines on the CY14B101L, only the lower 16 lines are used to control software modes.
  • Page 7: Maximum Ratings

    = Max, V < V < V , CE or OE > V = –2 mA = 4 mA pin and Vss, 6V rated. CY14B101L Ambient Temperature 0°C to +70°C 2.7V to 3.6V -40°C to +85°C 2.7V to 3.6V Commercial Industrial –...
  • Page 8: Thermal Resistance

    = 0 to 3.0V Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. Figure 4. AC Test Loads 3.0V Output 5 pF 789Ω CY14B101L Unit Years Unit 32-SOIC 48-SSOP Unit °C/W 33.64 32.9 °C/W...
  • Page 9: Switching Waveforms

    8. Device is continuously selected with CE and OE both Low. 9. Measured ±200 mV from steady state output voltage. 10. HSB must remain high during READ and WRITE cycles. Document Number: 001-06400 Rev. *I 25 ns Description CY14B101L 35 ns 45 ns Unit [7, 8, 10] [7, 10]...
  • Page 10 12. CE or WE must be greater than V during address transitions. Document Number: 001-06400 Rev. *I 25 ns Description [11, 12] DATA VALID HZWE HIGH IMPEDANCE DATA VALID HIGH IMPEDANCE CY14B101L 35 ns 45 ns Unit LZWE [11, 12] Page 10 of 18 [+] Feedback...
  • Page 11 15. Industrial Grade devices requires 15 ms max. Document Number: 001-06400 Rev. *I Description Rise Time Figure 9. AutoStore/Power Up RECALL STORE HRECALL SWITCH SWITCH CY14B101L CY14B101L Unit 12.5 2.65 μs No STORE occurs STORE occurs only if a SRAM write...
  • Page 12 17. The six consecutive addresses must be read in the order listed in the Mode Selection table. WE must be HIGH during all six consecutive cycles. Document Number: 001-06400 Rev. *I [16, 17] 25 ns Description DATA VALID DATA VALID CY14B101L 35 ns 45 ns [17] STORE RECALL HIGH IMPEDANCE...
  • Page 13 20. Commands such as Store and Recall lock out I/O until operation is complete which further increases this time. See specific command. Document Number: 001-06400 Rev. *I Description Figure 12. Hardware STORE Cycle [19, 20] Figure 13. Soft Sequence Processing to allow read and write cycles to complete. DELAY CY14B101L CY14B101L Unit μs Page 13 of 18 [+] Feedback...
  • Page 14: Part Numbering Nomenclature

    Part Numbering Nomenclature CY 14 B 101 L - SZ 25 X C T Pb-Free NVSRAM 14 - AutoStore + Software Store + Hardware Store Cypress Ordering Information Speed Ordering Code (ns) CY14B101L-SZ25XCT CY14B101L-SZ25XC CY14B101L-SP25XCT CY14B101L-SP25XC CY14B101L-SZ25XIT CY14B101L-SZ25XI CY14B101L-SP25XIT CY14B101L-SP25XI CY14B101L-SZ35XCT CY14B101L-SZ35XC...
  • Page 15: Package Diagrams

    Ordering Information Speed Ordering Code (ns) CY14B101L-SZ45XCT CY14B101L-SZ45XC CY14B101L-SP45XCT CY14B101L-SP45XC CY14B101L-SZ45XIT CY14B101L-SZ45XI CY14B101L-SP45XIT CY14B101L-SP45XI All parts are Pb-free. The above table contains Final information. Please contact your local Cypress sales representative for availability of these parts Package Diagrams 0.810[20.574] 0.822[20.878] 0.050[1.270]...
  • Page 16 CY14B101L Package Diagrams (continued) Figure 15. 48-Pin Shrunk Small Outline Package (51-85061) 51-85061-*C Document Number: 001-06400 Rev. *I Page 16 of 18 [+] Feedback...
  • Page 17 Document History Page Document Title: CY14B101L 1 Mbit (128K x 8) nvSRAM Document Number: 001-06400 Submission Rev. ECN No. Date 425138 437321 471966 503272 597002 688776 1349963 UHA/SFV 2427986 GVCH 2546756 GVCH/AESA 2625139 GVCH/PYRS Document Number: 001-06400 Rev. *I Orig. of...
  • Page 18 AutoStore and QuantumTrap are registered trademarks of Cypress Semiconductor Corporation. All products and company names mentioned in this document may be the trademarks of their respective holders. PSoC Solutions psoc.cypress.com General clocks.cypress.com Low Power/Low Voltage Precision Analog LCD Drive image.cypress.com CAN 2.0b Revised January 30, 2009 CY14B101L psoc.cypress.com/solutions psoc.cypress.com/low-power psoc.cypress.com/precision-analog psoc.cypress.com/lcd-drive psoc.cypress.com/can psoc.cypress.com/usb Page 18 of 18 [+] Feedback...

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