Clamp Output Screen - Keysight Technologies PD1500A Software Manual

Set Double-Pulse Test Parameters

Clamp Output Screen

Static R
Static R
device – Si, SiC, GaN, etc.
This was implemented in previous versions of the PD1000A software. However,
the method of extraction has changed.
The old method:
The method used with PD1000A Software version 2022.321(and later):
Dynamic R
Dynamic R
trapping phenomenon. It does not apply to any Si or SiC devices. JEDEC's
standard JEP 173 describes how to extract dynamic R
HEMT transistors for both enhancement and depletion-mode. This standard can
be applied to all discrete lateral GaN power transistors but also integrated power
solutions and in wafer and package levels.
The test setup is a normal double-pulse test with clamped inductive or clamped
inductive-resistive load in series. To properly measure V
must be included due to the limitations of the oscilloscope precision. The
dynamic R
Keysight PD1500A Double-Pulse Test System Software Guide
DS,ON
extraction does not follow a standard. It can be measured for all
DS,ON
– Measure time of 95% test current.
– Measure clamp voltage and gate voltage at 95% test current time.
– Divide clamp voltage by 95% test current The result is R
– Output: 95 % test current, clamp voltage, R
– Filters: both the clamp voltage and the current channel values are low
pass filtered with a frequency of 80 MHz.
– Measure time t of latest 100 % value of V
– At this time t, measure clamp voltage, gate voltage, and output current.
– Filters: both the clamp voltage and the current channel values are low
pass filtered with a frequency of 80 MHz.
– Result of the division at the time t is R
DS,ON
is an effect of lateral GaN transistors. It appears due to the charge
ON
is measured at a certain time T
DS,ON
Unless you specify a t
Extraction, only one pulse is used for the R
Double-Pulse Test Device Characterization Tests
, and gate voltage
ON
.
GS
ON
parameter for GaN
ON
DS,ON
.
M,ON
time under Additional Dynamic
m,on
DS,ON
ON.
a clamp circuit
Clamp test.
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