Table of Contents
Advertisement
Flash Memory Write/Erase Characteristics (T
Parameter
Symbol
Operating frequency
f
X
Note
Write current
I
DDW
(V
pin)
DD
Note
Write current
I
PPW
(V
pin)
PP
Note
Erase current
I
DDE
(V
pin)
DD
Note
Erase current
I
PPE
(V
pin)
PP
Unit erase time
t
er
Total erase time
t
era
Write count
V
supply voltage
V
PP
PP0
V
PP1
Note The port current (including the current that flows to the on-chip pull-up resistors) is not included.
332
CHAPTER 20 ELECTRICAL SPECIFICATIONS
= 10 to 40°C, V
A
Conditions
V
= 2.7 to 5.5 V
DD
V
= 1.8 to 5.5 V
DD
When V
supply
During f
PP
voltage = V
operation
PP1
When V
supply voltage = V
PP
PP1
When V
supply
During f
PP
voltage = V
operation
PP1
When V
supply voltage = V
PP
PP1
Erase/write are regarded as 1 cycle
In normal operation
During flash memory programming
User's Manual U15075EJ2V1UD
= 1.8 to 5.5 V)
DD
MIN.
TYP.
1.0
1.0
= 5.0 MHz
X
= 5.0 MHz
X
0.5
0
9.7
MAX.
Unit
5
MHz
1.25
MHz
7
mA
12
mA
7
mA
100
mA
1
1
s
20
s
20
Times
0.2V
V
DD
10.0
10.3
V
Advertisement
Table of Contents
