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19 ELECTRICAL CHARACTERISTICS
External memory access
• Read cycle
Condition: V
= 1.8 to 3.6 V, V
DD
V
= 0.8V
, V
= 0.2V
OH
DD
OL
DD
Item
Address set-up time in read cycle
Address hold time in read cycle
Read signal pulse width
Data input set-up time in read cycle
Data input hold time in read cycle
Note) 1
Substitute the number of states for wait insertion in n.
• Write cycle
Condition: V
= 1.8 to 3.6 V, V
DD
V
= 0.8V
, V
= 0.2V
OH
DD
OL
DD
Item
Address set-up time in write cycle
Address hold time in write cycle
Write signal pulse width
Data output set-up time in write cycle
Data output hold time in write cycle
Note) 1
Substitute the number of states for wait insertion in n.
ICLK
A00–A19
CE
RD
DIN
A00–A19
CE
WR
DOUT
* In the case of crystal oscillation and ceramic oscillation:
* In the case of CR oscillation:
140
= 0 V, Ta = 25°C, V
SS
IH1
, C
= 100 pF (load capacitance)
L
Symbol
t
ras
t
rah
t
rp
t
rds
t
rdh
= 0 V, Ta = 25°C, V
SS
IH1
, C
= 100 pF (load capacitance)
L
Symbol
t
was
t
wah
t
wp
t
wds
t
wdh
V
V
OH
V
OL
V
OH
V
OL
V
OH
V
OL
c ± 0.10
t
t
t
h = 0.5
c,
= 0.8V
, V
= 0.2V
, V
DD
IL1
DD
IH2
Min.
Typ.
t
t
t
c+
l-50+n•
c/2
t
h-40
t
t
c-10+n•
c/2
150
0
= 0.8V
, V
= 0.2V
, V
DD
IL1
DD
IH2
Min.
Typ.
t
c-90
t
h-40
t
t
l-20+n•
c/2
t
t
c-90+n•
c/2
t
h-40
t
c
*
IH2
V
IL2
t
t
*
*
h
l
t
ras
t
rp
t
rds
V
IH1
V
IL1
t
was
V
OH
V
OL
t
wp
t
wds
V
IH1
V
IL1
c ± 0.05
t
t
t
t
h = 0.5
c,
l =
t
t
t
t
l =
c -
h (1/
c: oscillation frequency)
EPSON
= 1.6 V, V
= 0.6 V,
IL2
Max.
Unit
= 1.6 V, V
= 0.6 V,
IL2
Max.
Unit
t
h+40
t
rah
t
rdh
t
wah
t
wdh
t
t
t
c -
h (1/
c: oscillation frequency)
S1C88655 TECHNICAL MANUAL
Note
ns
1
ns
ns
1
ns
ns
Note
ns
ns
ns
1
ns
1
ns
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