Silicon Laboratories I2C Manual page 11

Table 7. Control Pins
(V = 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, T
DD
Parameter
Input Control Pins (IN3, IN4)
Input Voltage Low
Input Voltage High
Input Capacitance
Input Resistance
Output Control Pins (INTR)
Output Voltage Low
Rise/Fall Time 20–80%
Table 8. Crystal Specifications for 8 to 11 MHz
Parameter
Crystal Frequency
Load Capacitance (on-chip differential)
Crystal Output Capacitance
Equivalent Series Resistance
Crystal Max Drive Level
*Note: See "AN360: Crystal Selection Guide for Si533x and Si5355/56 Devices" for how to adjust the registers to
accommodate a 12 pF crystal C
Table 9. Crystal Specifications for 11 to 19 MHz
Parameter
Crystal Frequency
Load Capacitance (on-chip differential)
Crystal Output Capacitance
Equivalent Series Resistance
Crystal Max Drive Level
*Note: See "AN360: Crystal Selection Guide for Si533x and Si5355/56 Devices" for how to adjust the registers to
accommodate a 12 pF crystal C
= –40 to 85 °C)
A
Symbol Condition
V
IL
V
IH
C
IN
R
IN
V I = 3 mA
OL SINK
< 10 pf, pull up  1 k
t /t C
R F L
Symbol
f
XTAL
c (supported)*
L
c (recommended)
L
c
r
ESR
d
.
L
Symbol
f
XTAL
c (supported)*
L
c (recommended)
L
c
O
r
ESR
d
L
.
L
Rev. 1.2
Min Typ
–0.1
0.7 x V
DD
—
—
0
—
Min Typ
8 —
11 12
17 18
— —
O
— —
100 —
L
Min Typ
11 —
11 12
17 18
— —
— —
100 —
Si5338
Max Unit
— 0.3 x V V
DD
— 3.73 V
— 4 pF
20 — k
— 0.4 V
— 10 ns
Max Unit
11 MHz
13 pF
19 pF
6 pF

300
— µW
Max Unit
19 MHz
13 pF
19 pF
5 pF

200
— µW
11