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Electrical Characteristics - Renesas HSG1001 Specification Sheet

Sigehbt high frequency low noise amplifier

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HSG1001

Electrical Characteristics

Item
DC current transfer ratio
Reverse Transfer Capacitance
Transition Frequency
Insertion power gain
Note1
Maximum Stable Gain
Power Gain
Noise figure
Note2
Maximum Available Gain
Notes: 1. MSG = |S
| / |S
21
2. MAG = |S
| / |S
21
Rev.1.00, Apr.08.2004, page 2 of 37
Symbol
Min
Typ
h
100
200
FE
C
0.08
re
f
35
T
2
|S21|
19
17
11
MSG
22
21
15
PG
19.5
18
8.5
11.5
NF
0.75
0.85
1.3
MAG
13
|
12
2
1/2
|(K-(K
-1)
)
12
Max
Unit
Test conditions
300
V
= 2 V, I
CE
pF
V
= 2 V, I
CB
GHz
V
= 2 V, I
CE
dB
V
= 2 V, I
CE
V
= 2 V, I
CE
V
= 2 V, I
CE
dB
V
= 2 V, I
CE
V
= 2 V, I
CE
V
= 2 V, I
CE
dB
V
= 2 V, I
CE
V
= 2 V, I
CE
V
= 2 V, I
CE
dB
V
= 2 V, I
CE
V
= 2 V, I
CE
1.9
V
= 2 V, I
CE
dB
V
= 2 V, I
CE
(Ta = 25°C)
= 5 mA
C
= 0, f = 1 MHz
E
= fT peak, f = 1 GHz
C
= 5 mA, f = 1.8 GHz
C
= 5 mA, f = 2.4 GHz
C
= 10 mA, f = 5.8 GHz
C
= 5 mA, f = 1.8 GHz
C
= 5 mA, f = 2.4 GHz
C
= 10 mA, f = 5.8 GHz
C
= 5 mA, f = 1.8 GHz
C
= 5 mA, f = 2.4 GHz
C
= 10 mA, f = 5.8 GHz
C
= 5 mA, f = 1.8 GHz
C
= 5 mA, f = 2.4 GHz
C
= 10 mA, f = 5.8 GHz
C
= 10 mA, f = 5.8 GHz
C

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