HSG1001
SiGeHBT
High Frequency Low Noise Amplifier
Features
High power gain and low noise figure ;
MSG = 22 dB typ. , NF = 0.75 dB typ. at V
MSG = 21 dB typ. , NF = 0.85 dB typ. at V
MSG = 15 dB typ. , NF = 1.3 dB typ. at V
Transition Frequency
f
= 35 GHz typ. at f = 1 GHz
T
V
= 3.5 V
CEO
Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.
Outline
Note:
Marking is "VD-".
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )
Rev.1.00, Apr.08.2004, page 1 of 37
= 2 V, I
= 5 mA, f = 1.8 GHz
CE
C
= 2 V, I
= 5 mA, f = 2.4 GHz
CE
C
= 2 V, I
= 10 mA, f = 5.8 GHz
CE
C
CMPAK-4
2
3
1
4
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Note1
Pc
Tj
Tstg
1. Emitter
2. Collector
3. Emitter
4. Base
Ratings
8
3.5
1.2
35
100
250
150
–55 to +150
REJ03G0195-0100Z
Rev.1.00
Apr.08.2004
(Ta = 25°C)
Unit
V
V
V
mA
mW
mW
C
°C