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Renesas HSG2004 Specifications

Renesas HSG2004 Specifications

Sige hbt high frequency medium power amplifier
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HSG2004
SiGe HBT
High Frequency Medium Power Amplifier
Features
High Transition Frequency
f
= 30 GHz typ.
T
Low Distortion and Excellent Linearity
P1dB at output = +14.5 dBm typ. f = 5.8 GHz
High Collector to Emitter Voltage
V
= 5 V
CEO
Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
Outline
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
Note:
Marking is "2004".

Absolute Maximum Ratings

Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: Value on PCB (40 x 40 x 1.0 mm)
Rev.4.00 Jun 21, 2006 page 1 of 12
9
5
7 6
4
8
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
9
4
5
6
7
3
2
8
1
Ratings
12
5
1.2
200
Note
1
150
–55 to +150
REJ03G0484-0400
Rev.4.00
Jun 21, 2006
1. Collector
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
(Ta = 25°C)
Unit
V
V
V
mA
W
C
°C

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  • Page 1: Absolute Maximum Ratings

    P1dB at output = +14.5 dBm typ. f = 5.8 GHz High Collector to Emitter Voltage = 5 V Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. Outline Renesas Package code: PWQN0008ZA-A (Package name: HWQFN-8 <TNP-8TV>) Note: Marking is “2004”. Absolute Maximum Ratings...

  • Page 2: Electrical Characteristics

    HSG2004 Electrical Characteristics Item DC current transfer ratio Reverse Transfer Capacitance Transition Frequency Maximum Stable Gain Maximum Available Gain Maximum Available Gain Power Gain 1dB Compression Point at output Saturation Output Power Main Characteristics Rev.4.00 Jun 21, 2006 page 2 of 12 Symbol 30.0...
  • Page 3 HSG2004 Typical Transfer Characteristics = 3 V Base to Emitter Voltage Reverse Transfer Capacitanse vs. Collector to Base Voltage Collector to Base Voltage Maximum Stable Gain, Maximum Available Gain vs. Collector Current = 3 V Collector Current Rev.4.00 Jun 21, 2006 page 3 of 12...
  • Page 4 HSG2004 2.4 GHz Characteristics Evaluation Board Circuit VBB:Bias Control Characteristics Characteristics = 3.6 V = 30 mA idle f = 2.4 GHz Input Power P in (dBm) S parameter vs. Frequency Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 4 of 12 *1 µF...
  • Page 5 HSG2004 5.8 GHz Characteristics Evaluation Board Circuit VBB:Bias Control *1 µF Characteristics Characteristics = 3.6 V = 30 mA idle f = 5.8 GHz P out Input Power P in (dBm) S parameter vs. Frequency = 3.6 V = 30 mA Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 5 of 12...
  • Page 6 HSG2004 Parameter vs. Frequency .6 .8 1 Condition: V = 3 V, I 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Parameter vs. Frequency 90° 120° 150° 180° -150° -120° -90° Condition: V = 3 V, I...
  • Page 7 HSG2004 Parameter vs. Frequency .6 .8 1 Condition: V = 3.3 V, I 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Parameter vs. Frequency 90° 120° 150° 180° -150° -120° -90° Condition: V = 3.3 V, I...
  • Page 8 HSG2004 Parameter vs. Frequency .6 .8 1 Condition: V = 3.6 V, I 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Parameter vs. Frequency 90° 120° 150° 180° -150° -120° -90° Condition: V = 3.6 V, I...
  • Page 9 HSG2004 S parameter f (MHz) ANG (deg.) 0.684 -61.3 0.708 -53.6 0.664 -81.8 0.644 -105.0 0.638 -121.4 0.640 -134.8 0.640 -143.6 0.640 -150.6 0.641 -156.5 1000 0.641 -161.6 1100 0.644 -166.1 1200 0.648 -169.8 1300 0.649 -173.1 1400 0.651 -176.2 1500 0.651...
  • Page 10 HSG2004 S parameter f (MHz) ANG (deg.) 0.674 -60.3 0.708 -53.6 0.668 -81.6 0.646 -104.3 0.637 -121.1 0.638 -134.3 0.640 -143.1 0.639 -150.2 0.639 -156.1 1000 0.639 -161.2 1100 0.643 -165.7 1200 0.647 -169.5 1300 0.648 -172.8 1400 0.649 -175.9 1500 0.650...
  • Page 11 HSG2004 S parameter f (MHz) ANG (deg.) 0.686 -60.1 0.713 -53.6 0.669 -81.1 0.645 -103.8 0.637 -120.5 0.638 -133.6 0.638 -142.5 0.637 -149.7 0.638 -155.6 1000 0.638 -160.8 1100 0.642 -165.3 1200 0.645 -169.1 1300 0.645 -172.4 1400 0.648 -175.6 1500 0.648...

  • Page 12: Package Dimensions

    Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.4.00 Jun 21, 2006 page 12 of 12 Previous Code MASS[Typ.]...
  • Page 13 Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

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