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Main Characteristics - Renesas HSG1001 Specification Sheet

Sigehbt high frequency low noise amplifier

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HSG1001

Main Characteristics

Collector Power Dissipation Curve
500
Value on PCB
(FR-4: 40 x 40 x 1.6 mm
Double side)
400
300
200
100
0
50
Ambient Temperature
DC Current Transfer Ratio vs.
300
250
200
VCE=2V
150
100
50
0
0.1
Collector Current
Gain Bandwidth Product vs.
45
f=1GHz
40
35
30
25
20
15
10
5
0
1
Collector Current
Rev.1.00, Apr.08.2004, page 3 of 37
100
150
Ta (°C)
Collector Current
VCE=3V
VCE=1V
1
10
I
(mA)
C
Collector Current
VCE=3V
VCE=2V
VCE=1V
10
I
(mA)
C
35
30
25
20
15
10
5
200
0
Collector to Emitter Voltage
Reverse Transfer Capacitance vs.
0.20
0.15
0.10
0.05
0
100
Collector to Base Voltage V
|S
21
30
V
CE
f=1.8GHz
25
20
15
10
5
0
1
100
Collector Current
Typical Output Characteristics
1
2
V
Collector to Base Voltage
f=1MHz
2
1
CB
2
|
,MSG vs. Collector Current
=1V
MSG
MAG
S21
10
I
(mA)
C
3
(V)
CE
3
(V)
100

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