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Renesas HSG2005 Specifications

Renesas HSG2005 Specifications

Sige hbt high frequency medium power amplifier
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HSG2005
SiGe HBT
High Frequency Medium Power Amplifier
Features
High Transition Frequency
f
= 28.5 GHz typ.
T
Low Distortion and Excellent Linearity
P1dB at output = +21 dBm typ. f = 5.8 GHz
High Collector to Emitter Voltage
V
= 5 V
CEO
Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
Outline
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
Note:
Marking is "2005".

Absolute Maximum Ratings

Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: Value on PCB (40 x 40 x 1.0 mm)
Rev.4.00 Jun 21, 2006 page 1 of 12
9
5
7 6
4
8
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
9
4
5
6
7
3
2
8
1
Ratings
12
5
1.2
400
Note
1.2
150
–55 to +150
REJ03G0485-0400
Rev.4.00
Jun 21, 2006
1. Collector
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
(Ta = 25°C)
Unit
V
V
V
mA
W
C
°C

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  • Page 1: Absolute Maximum Ratings

    P1dB at output = +21 dBm typ. f = 5.8 GHz High Collector to Emitter Voltage = 5 V Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. Outline Renesas Package code: PWQN0008ZA-A (Package name: HWQFN-8 <TNP-8TV>) Note: Marking is “2005”. Absolute Maximum Ratings...

  • Page 2: Electrical Characteristics

    HSG2005 Electrical Characteristics Item DC current transfer ratio Reverse Transfer Capacitance Transition Frequency Maximum Stable Gain Maximum Available Gain Maximum Available Gain Power Gain 1dB Compression Point at output Saturation Output Power Main Characteristics Rev.4.00 Jun 21, 2006 page 2 of 12 Symbol 28.5...
  • Page 3 HSG2005 Typical Transfer Characteristics = 3 V Base to Emitter Voltage Reverse Transfer Capacitanse vs. Collector to Base Voltage Collector to Base Voltage Maximum Stable Gain, Maximum Available Gain vs. Collector Current = 3 V Collector Current Rev.4.00 Jun 21, 2006 page 3 of 12...
  • Page 4 HSG2005 2.4 GHz Characteristics Evaluation Board Circuit VBB : Bias Control Pin - Pout Characteristics Characteristics = 3.6 V = 50 mA idle f = 2.4 GHz Input Power P in (dBm) S parameter vs. Frequency = 3.6 V = 50 mA Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 4 of 12...
  • Page 5 HSG2005 5.8 GHz Characteristics Evaluation Board Circuit VBB : Bias Control *1 µF Pin - Pout Characteristics Characteristics = 3.6 V = 100 mA idle f = 5.8 GHz Input Power P in (dBm) S parameter vs. Frequency Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 5 of 12...
  • Page 6 HSG2005 Parameter vs. Frequency .6 .8 1 Condition: V = 3 V, I 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Parameter vs. Frequency 90° 120° 150° 180° -150° -120° -90° Condition: V = 3 V, I...
  • Page 7 HSG2005 Parameter vs. Frequency .6 .8 1 Condition: V = 3.3 V, I 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Parameter vs. Frequency 90° 120° 150° 180° -150° -120° -90° Condition: V = 3.3 V, I...
  • Page 8 HSG2005 Parameter vs. Frequency .6 .8 1 Condition: V = 3.6 V, I 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Parameter vs. Frequency 90° 120° 150° 180° -150° -120° -90° Condition: V = 3.6 V, I...
  • Page 9 HSG2005 S parameter f (MHz) ANG (deg.) 0.687 -139.8 0.775 -160.8 0.786 -169.2 0.792 -174.5 0.797 -178.1 0.802 179.0 0.803 176.6 0.804 174.2 0.802 171.9 1000 0.804 169.8 1100 0.807 168.1 1200 0.809 166.5 1300 0.809 164.8 1400 0.809 163.1 1500 0.809...
  • Page 10 HSG2005 S parameter f (MHz) ANG (deg.) 0.675 -140.9 0.771 -160.6 0.785 -168.9 0.790 -174.3 0.794 -178.0 0.800 179.2 0.802 176.7 0.802 174.3 0.801 172.0 1000 0.802 170.0 1100 0.805 168.2 1200 0.808 166.6 1300 0.808 164.9 1400 0.808 163.1 1500 0.807...
  • Page 11 HSG2005 S parameter f (MHz) ANG (deg.) 0.669 -141.0 0.763 -160.3 0.781 -168.8 0.787 -174.2 0.793 -177.9 0.799 179.3 0.800 176.8 0.801 174.4 0.800 172.1 1000 0.801 170.0 1100 0.804 168.3 1200 0.807 166.7 1300 0.807 165.0 1400 0.806 163.2 1500 0.806...

  • Page 12: Package Dimensions

    Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.4.00 Jun 21, 2006 page 12 of 12 Previous Code MASS[Typ.]...
  • Page 13 Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

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