HSG2005
SiGe HBT
High Frequency Medium Power Amplifier
Features
High Transition Frequency
f
= 28.5 GHz typ.
T
Low Distortion and Excellent Linearity
P1dB at output = +21 dBm typ. f = 5.8 GHz
High Collector to Emitter Voltage
V
= 5 V
CEO
Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
Outline
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
Note:
Marking is "2005".
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: Value on PCB (40 x 40 x 1.0 mm)
Rev.4.00 Jun 21, 2006 page 1 of 12
9
5
7 6
4
8
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
9
4
5
6
7
3
2
8
1
Ratings
12
5
1.2
400
Note
1.2
150
–55 to +150
REJ03G0485-0400
Rev.4.00
Jun 21, 2006
1. Collector
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
(Ta = 25°C)
Unit
V
V
V
mA
W
C
°C