HSG1002
SiGeHBT
High Frequency Low Noise Amplifier
Features
High power gain and low noise figure ;
MSG = 21 dB typ. , NF = 0.7 dB typ. at V
MSG = 20 dB typ. , NF = 0.8 dB typ. at V
MSG = 16 dB typ. , NF = 1.2 dB typ. at V
Transition Frequency
f
= 38 GHz typ. at f = 1 GHz
T
V
= 3.5 V
CEO
Ideal for 2.4 GHz / 5 GHz Band WLAN and Cordless phone applications.
Outline
Note:
Marking is "VE-".
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Notes: 1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )
Rev.1.00, Apr.12.2004, page 1 of 37
= 2 V,I
CE
= 2 V,I
CE
= 2 V,I
CE
MFPAK-4
3
2
VE-
4
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
note1
Pc
Tj
Tstg
= 5 mA, f = 1.8 GHz
C
= 5 mA, f = 2.4 GHz
C
= 10 mA, f = 5.8 GHz
C
2
3
1
4
Ratings
8
3.5
1.2
35
80
200
150
–55 to +150
REJ03G0196-0100Z
Apr.12.2004
1. Emitter
2. Collector
3. Emitter
4. Base
(Ta = 25°C)
Unit
V
V
V
mA
mW
mW
C
°C
Rev.1.00