HSG1002 SiGeHBT High Frequency Low Noise Amplifier Features High power gain and low noise figure ; MSG = 21 dB typ. , NF = 0.7 dB typ. at V MSG = 20 dB typ. , NF = 0.8 dB typ. at V MSG = 16 dB typ.
HSG1002 Electrical Characteristics Item Symbol DC current transfer ratio Reverse Transfer Capacitance Transition Frequency Insertion power gain |S21| note1 Maximum Stable Gain Power Gain Noise figure note2 Maximum Available Gain Notes: 1. MSG = |S | / |S 2. MAG = |S...
HSG1002 Main Characteristics Collector Power Dissipation Curve Value on PCB (FR-4: 40 x 40 x 1.6 mm Double side) Ambient Temperature DC Current Transfer Ratio vs. Collector Current VCE=3V VCE=2V Collector Current Gain Bandwidth Product vs. Collector Current f=1GHz Collector Current Rev.1.00, Apr.12.2004, page 3 of 37...
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HSG1002 ,MSG,MAG vs. Collector Current f=2.4GHz Collector Current ,MSG vs. Collector Current f=1.8GHz Collector Current ,MSG,MAG vs. Collector Current f=5.8GHz Collector Current Rev.1.00, Apr.12.2004, page 4 of 37 (mA) (mA) (mA) ,MSG,MAG vs. Collector Current f=5.8GHz Collector Current (mA) ,MSG,MAG vs. Collector Current f=2.4GHz...
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HSG1002 ,MSG,MAG vs. Collector Current f=2.4GHz Collector Current ,MSG,MAG vs Frequency I c =10mV Frequency f (GHz) ,MSG,MAG vs Frequency I c =10mA Frequency f (GHz) Rev.1.00, Apr.12.2004, page 5 of 37 (mA) ,MAG vs. Collector Current f=5.8GHz Collector Current...
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HSG1002 Power Gain vs. Collector Current Collector Current Power Gain vs. Collector Current f=1.8GHz Collector Current Power Gain vs. Collector Current f=1.8GHz Collector Current Rev.1.00, Apr.12.2004, page 6 of 37 f=1.8GHz f=2.4GHz f=5.8GHz (mA) f=2.4GHz f=5.8GHz (mA) f=2.4GHz f=5.8GHz (mA) Noise Figure vs.
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HSG1002 3rd. Order Intercept Point (IP3) Input Power P 3rd. Order Intercept Point (IP3) = 2V = 5 mA fd = 5.8 GHz fud = 5.801 GHz Input Power P 3rd. Order Intercept Point (IP3) Input Power P Rev.1.00, Apr.12.2004, page 7 of 37...
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HSG1002 3rd. Order Intercept Point (IP3) Input Power P 3rd. Order Intercept Point (IP3) = 2V = 20 mA fd = 5.8 GHz fud = 5.801 GHz Input Power P Rev.1.00, Apr.12.2004, page 8 of 37 Fundamental = 2V = 20 mA fd = 1.8 GHz...
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HSG1002 Parameter vs. Frequency –.2 –.4 –.6 –.8 –1 Condition: VCE = 1 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) 1000 to 2000 MHz (200 MHz step) 2000 to 6000 MHz (400 MHz step)
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HSG1002 Parameter vs. Frequency –.2 –.4 –.6 –.8 –1 Condition: VCE = 2 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) 1000 to 2000 MHz (200 MHz step) 2000 to 6000 MHz (400 MHz step)
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HSG1002 Parameter vs. Frequency –.2 –.4 –.6 –.8 –1 Condition: VCE = 3 V , Zo = 50 Ω 100 to 1000 MHz (100 MHz step) 1000 to 2000 MHz (200 MHz step) 2000 to 6000 MHz (400 MHz step)
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HSG1002 HSG1002 5.8GHz Evaluation Board Evaluation Board Pattern Layout Circuit V CC V BB 2.2 u u F 2.2 uF 39 ohm 1000 pF 10 pF 10 pF 1000 pF 1 nH 6.8 n n H 3 pF 1 pF 0.2 pF...
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HSG1002 Electrical Characteristics on Evaluation Board Item Noise Figure Power Gain Input Return Loss Output Return Loss 1dB Gain Compression Third order intercept point Rev.1.00, Apr.12.2004, page 34 of 37 Symbol Data Unit 1.36 12.0 RLin RLout 14.0 P1dB OIP3 (VCC = 2V, IC = 10mA, Ta = 25°C)
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HSG1002 -5 -5 RLin RLin RLout RLout |S21| |S21| @VCE=2V @VCE=2V f=5.8GHz f=5.8GHz Rev.1.00, Apr.12.2004, page 35 of 37 RLin, Rlout, |S21| RLin, Rlout, |S21| VS f VS f f (GHz) f (GHz) PG, NF-IC PG, NF-IC IC (mA) IC (mA)
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HSG1002 @VCE=2V @VCE=2V IC=10mA IC=10mA fd=5.8GHz fd=5.8GHz fud=5.801GHz fud=5.801GHz Rev.1.00, Apr.12.2004, page 36 of 37 Pin-Pout, OIP3 Pin-Pout, OIP3 Pin (dBm) Pin (dBm) Pout Pout OIP3 OIP3...
Ordering Information Part Name Quantity HSG1002VE- 10,000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Apr.12.2004, page 37 of 37 Lead Material 0.0016...
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Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.