Overview
The main Flash memory can be protected against different types of unwanted access
(read/write/erase). There are two types of protection:
●
Page Write Protection
●
Read Protection
Refer to
During a write operation to the Flash memory, any attempt to read the Flash memory will
stall the bus. The read operation will proceed correctly once the write operation has
completed. This means that code or data fetches cannot be made while a write/erase
operation is ongoing.
For write and erase operations on the Flash memory (write/erase), the internal RC oscillator
(HSI) must be ON.
The Flash memory can be programmed and erased using in-circuit programming and in-
application programming.
Note:
In the low-power modes, all Flash memory accesses are aborted. Refer to the
STM32F10xxx reference manual for further information.
10/31
Section 2.4 on page 17
for more details.
Doc ID 17863 Rev 1
PM0075
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