Bibliography Of Quasistatic Cv Measurements And Related Topics - Keithley 595 Instruction Manual

APPLICATIONS
5.4 BIBLIOGRAPHY OF QUASISTATIC CV
MEASUREMENTS AND RELATED TOPICS
'I. Texts:
A. Nicollian, E.H. and Brews, J.R., MOS Phvsics and
Technology. Wiley, New York (1982).
B. Sze, S.M., Phvsics of Semiconductor Devices Wiley,
New York (1969)
C.-Grove, A.S., Physics and Technology of Semicon-
ductor Devices. Wiley, New York (1967).
II. Articles and Papers:
A. Feedback Charge Method
1. Mego, T.J. "Improved Feedback Charge Method
for Quasistatic CV Measurements in Semicon-
ductors". Rev. Sci. Instr. 57, II (1986).
2. Mego, T.J. "Improved Quasistatic CV Measure-
ment Method for MOS". Solid State Technology,
29, 11, Sly-21 (1986).
2. Markgraf, W., Baumann, M., Beyer, A., Arst, P.,
Rennau, M., "Nutzung der stat&hen CU-
Methode im Rahmen eines mikrorechnerges-
teuerten MOS-Messplatzes", Phys. d.
Halbleiteroberflaeche. Is, 73 (1984).
B. Q-V/Static Method
1. Ziegler, K. and Klausmann, E., "Static Technique
for Precise Measurements of Surface Potential
and Interface State Density in MOS S~tructures",
AppLPhys. L&t. 26, 400 (1975).
2. Kirov, K., Alexsandrova, S. and Minchev, G.,
'Error in Surface State Determination Caused by
Numerical Differentiation of Q-V Data': Solid
State Electronics. l8, 341 (1978).
C Q-C Method and Simultaneous High-Low Fre-
quency CV
1. Nicollian, E.H. and Brews, J.R., "Instrumentation
and Analog Implementation of the Q-C Method
for MOS Measurements'; Solid State Electronics.
n, 9.53 (1984).
2. Boulin, D.M., Brews, J.R. and Nicollian, E.H.,
"Digital Implementation of the Q-C Method for
MOS Measurements", Solid State Electronics. 27
977 (1984).
3. Derbenwick, GE, 'Automated C-V and IYI-w
Curves for MOS Device Analysis", Sandia Report
SANDgO-1308 (1982).
D. Ramp Method
1. Kuhn, M., "A Quasistatic Technique for MOS
C-V and Surface State Measurements". Solid State
Electronics. 13, 873 (1970).
2. Castagne, R., "De'termination de la densite'
d'e'tats lents d'une capacite' me'tak-isolant
semiconducteur par l'e'tude de la charge sous une
tension croissant line 'airement", C.R.Acad. Sci.
267, 866 (1968).
3. Kerr, D.R., "MIS Measurement Technique Utilii-
ing ~Slow Voltage Ramps'; Int .Conf.Properties and
Use of MIS Structures, Grenoble, France, 303
(1969).
4. Castagne, R. and VapaiIle, A., "Description of the
SiO,Si Interface Properties by Means of Very Iow
Frequency MOS Capacitance Measurements",
Surface Science, 28, I57 (197l).
5. Kuhn, M. and Nicollian, E.H., "Nonequilibrium
Effects in Quasi-static MOS Measurements';
J.EIectrochem.Soc., Us, 373 (197l).
6. Lopez, A.D., "Using the Quasistatic Method for
MOS Measurements", Rev.Sci.Instr 44,280 (1973).
E. Surface States/Interface States :
1. Berglund, C.N., "Surface States &Steam-Grown
Silicon-Silicon Dioxide Interfaces", IE%E
TransElectnmDev., X3, 701 (1966).
2. DeCIerdc, G., "Characterization of Surface States
at the Si-SiO, Interface'; Nondestructive Evalua-
tion of Semiconductor Materials and Devices (J.N.
Zemel, ed.) Plenum Press, New York, p. 105
(1-Y.
3. Brews, J.R., "Correcting Interface-State Errors in
MOS Doping Profile Determinations",
J.Appl.Phys. 44, 3228 (1973).
F. MOS Process Characterization
1. Zaininger, K.H. and H&man, El?, "The C-V
Technique as an Analytical Tool", Solid State
Technology. W:5-6 (1970).
2. M&ii&n, I+, "MOS C-V Techniques for IC Pro-
cess Control", Solid State Technology. 75,47 (1972).
3. Zerbst, M., "Relaxatlonseffekte an Halbeiter-
Isolator-Grenzflaechen", Z.Angew.Phys. 22, 30
(1966).
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