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Device User Guide — 9S12C128DGV1/D V01.05
A.1.6 ESD Protection and Latch-up Immunity
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Model
Human Body
Machine
Latch-up
Table A-3 ESD and Latch-Up Protection Characteristics
Num
C
1
C
Human Body Model (HBM)
2
C
Machine Model (MM)
3
C
Charge Device Model (CDM)
Latch-up Current at 125 C
4
C
positive
negative
Latch-up Current at 27 C
5
C
positive
negative
A.1.7 Operating Conditions
This chapter describes the operating conditions of the devices. Unless otherwise noted those conditions
apply to all the following data.
86
Table A-2 ESD and Latch-up Test Conditions
Description
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Minimum input voltage limit
Maximum input voltage limit
Rating
Symbol
Value
R1
1500
C
100
-
-
3
3
R1
0
C
200
-
-
3
3
-2.5
7.5
Symbol
Min
V
2000
HBM
V
200
MM
V
500
CDM
I
+100
LAT
-100
I
+200
LAT
-200
Unit
Ohm
pF
Ohm
pF
V
V
Max
Unit
-
V
-
V
-
V
-
mA
-
mA
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