Description Of Various Functions; Theory Of Cmos Image Sensor - Hamamatsu Photonics C11440-22CU Instruction Manual

C11440-22CU/C11440-22CU01 Instruction manual_Ver.1.4

10. DESCRIPTION OF VARIOUS FUNCTIONS

10-1 THEORY OF CMOS IMAGE SENSOR

The pixel of a CMOS image sensor is composed of the photodiode and the amplifier that
converts the charge into voltage. Entered light is converted to charge and converted to
voltage in the pixel. The voltage of each pixel is output by switching the switch one by one.
(Figure 10-1)
The FL-400 scientific CMOS image sensor used in this camera has an on-chip CDS
(correlated double sampling) circuit, which plays an important role in achieving low noise. In
addition, the FL-400 realizes both low noise and high speed readout simultaneously, by a
split readout scheme in which the top and the bottom halves of the sensor are readout
independently, and the data of each horizontal line is read by 2 lines of column amplifier and
A/D in the top and the bottom in parallel and simultaneously.
Figure 10-1 Structure of the FL-400
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