ELECTRICAL CHARACTERISTICS
operating temperature range (Note 2). Specified as each individual output channel (Note 4). T
RUNP = 0, FREQUENCY_SWITCH = 350kHz and V
EEPROM settings and per Test Circuit 1, unless otherwise noted.
SYMBOL
PARAMETER
SV
V
Threshold to Enable V
IN_THR
SVIN_nn
Switchover
SV
V
Threshold to Disable V
IN_THF
SVIN_nn
Switchover
V
Regulator
DD33_nn
V
Internal V
VDD33nn
DD33
I
V
Current Limit
LIM
DD33
V
V
Overvoltage Threshold
VDD33_OV
DD33
V
V
Undervoltage Threshold
VDD33_UV
DD33
V
Regulator
DD25_nn
V
Internal V
VDD25nn
DD25
I
V
Current Limit
LIM
DD25
Oscillator and Phase-Locked Loop (PLL)
f
PLL SYNC Range
RANGE
f
Oscillator Frequency Accuracy
OSC
V
SYNC Input Threshold (Note 15)
TH(SYNC_nn)
V
SYNC Low Output Voltage
OL(SYNC_nn)
I
SYNC Leakage Current in Slave Mode 0V ≤ V
LEAK(SYNC_nn)
SYNC to Ch0, Ch2 Phase
θSYNC-θ0,-θ2
Relationship Based on the Falling
Edge of Sync and Rising Edge of
SW0, SW2
SYNC to Ch1, Ch3 Phase
θSYNC-θ1,-θ3
Relationship Based on the Falling
Edge of Sync and Rising Edge of
SW1, SW3
EEPROM Characteristics
Endurance
(Note 13)
Retention
(Note 13)
Mass_Write
Mass Write Operation Time
Leakage Current SDA_nn, SCL_nn, ALERT_nn, RUNn
I
Input Leakage Current
OL
Leakage Current FAULTn, PGOODn
I
Input Leakage Current
GL
Digital Inputs SCL_nn, SDA_nn, RUNn
V
Input High Threshold Voltage
IH
V
Input Low Threshold Voltage
IL
V
Input Hysteresis
HYST
C
Input Capacitance
PIN
commanded to 1.000V unless otherwise noted. Configured with factory-default
OUTn
CONDITIONS
SV
Rising
BIAS
IN_nn
SV
Falling
BIAS
IN_nn
Voltage
4.5V < V
INTVCC_nn
V
DD33_nn
(Note 15)
(Note 15)
Voltage
V
DD25_nn
Synchronized with Falling Edge of SYNC
Frequency Switch = 250kHz to 1000kHz (Note 15)
V
Falling
SYNC
V
Rising
SYNC
I
= 3mA (Note 15)
LOAD
PIN
MFR_PWM_CONFIG[2:0] = 0,2,3
MFR_PWM_CONFIG[2:0] = 5
MFR_PWM_CONFIG[2:0] = 1
MFR_PWM_CONFIG[2:0]= 4,6
MFR_PWM_CONFIG[2:0] = 3
MFR_PWM_CONFIG[2:0] = 0
MFR_PWM_CONFIG[2:0] = 2,4,5
MFR_PWM_CONFIG[2:0] = 1
MFR_PWM_CONFIG[2:0] = 6
0°C ≤ T
J
T
< 125°C
J
STORE_USER_ALL, 0°C < T
During EEPROM Write Operation
OV ≤ V
PIN
OV ≤ V
PIN
SCL, SDA
For more information
The
denotes the specifications which apply over the specified internal
l
= GND, V
= INTV
= 4.5V
IN_nn
CC_nn
= GND, V
= INTV
= 4.5V
IN_nn
CC_nn
≤ 3.6V
≤ 85°C During EEPROM Write Operations
< 85°C
J
≤ 5.5V
≤ 3.6V
www.analog.com
LTM4681
= 25°C, V
= 12V, RUNn = 3.3V,
A
IN
MIN
TYP
7
6.5
3.2
3.3
100
3.5
3.1
2.5
80
250
l
l
1
1.5
0.2
0
60
90
120
120
180
240
270
300
10,000
l
10
l
440
l
l
l
0.8
l
0.08
MAX
UNITS
7.5
V
V
3.4
V
mA
V
V
V
mA
1000
kHz
±7.5
%
V
V
0.4
V
±5
µA
Deg
Deg
Deg
Deg
Deg
Deg
Deg
Deg
Deg
Cycles
Years
4100
ms
±5
µA
±2
µA
1.35
V
V
V
10
pF
Rev. A
9
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