A Specifications - Toshiba V Series Operation Manual

Appendix A Specifications
A.1 General Specifications
Table A-1 General Specifications (EN611, EN621, EN631, EN641, EB621, EB641)
Item
Working temperature range
(Product ambient temperature)
Working humidity range
Storage temperature range
Storage humidity range
Source voltage range
Current drain
(at rated power input)
Power consumption
(at rated power input)
Insulation resistance
(between signal and F.G.)
Dielectric strength
(between signal and F.G.)
Dust
Vibration resistance
Shock resistance
Grounding
Cooling
Module dimensions
Weight
Communication interface
Backup
+12 VDC external power
Note: Consumed within the EB621 module.
6F8C0879
EN611 EN621
o
0 to 55 C
10 to 95% RH (No condensation)
o
-25 to 70 C
5 to 95% RH (No condensation)
4.75 to 5.25 VDC (Rated:5.0VDC)
3.0V to 3.6VDC (Rated:3.3VDC)
1.1 A 1.3 A
(5.0VDC) (5.0 VDC)
with EB621
6.5W or less 7.5 W or less
with EB621
10 megohms or more
500 VAC for 1 minute
3
0.3 mg/m or less
2
4.9m/s 1.5mm
p-p
2
19.6m/s (3 times without power supply)
Class D (Grounding resistance: 100 ohms or less)
Natural air cooling
130 (H) × 35 (W) × 114 (D) mm
350g or less 350g or less 350g or less 350g or less 250g or less 250g or less
10BASE5 10BASE5
Single bus Dual bus
(Bus A)
• Backup memory: SRAM 512 kilobytes
• Backup time : 24 hours or more (at ambient temperature of 25
+12.0 VDC +/-5%, 0.5 A/ch maximum (Applicable to EN611, EN621, EB621)
Specifications
EN631 EN641
1.5A 1.7 A
(5.0VDC) (5.0 VDC)
with EB641
8.6W or less 9.6 W or less
with EB641
10BASE2 10BASE2
Single bus Dual bus
(Bus A)
EB621 EB641
0.01 A 0.5A
(+12 VDC) (5.0 VDC)
(Note)
0.12 W or 2.5 W or less
less
10BASE2 10BASE2
Dual bus Dual bus
(Bus B) (Bus B)
o
C)
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