Omron SYSMAC C200H-TC Operation Manual page 68

Programming
Timing for a Read Operation
4-3-4 I/O Refresh
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Temporarily turn the Write Request Flag OFF before executing the second
and subsequent write operations. Writing is enabled on the ON rising edge
of the Write Request Flag.
The Loop 1 and 2 executed bank number (Wd n+2) sets data directly. The
data is written to the Temperature Control Unit RAM. If the value is set out of
this range, the bank number reverts to the previous value (default value = 1).
Command (n)
Read complete
(Wd n+6),
bit 00
Read data
(Wd n+5)
1, 2, 3... 1. The read data is output to Wd (n+5) approximately 140 ms after the Read
command is executed.
2. The read data is updated every 100 ms.
3. When the Read command is modified, turn OFF the Read Complete Flag to
execute the next read operation.
The following descriptions apply to the C200HX/HG/HE, C200HS, C200H, and
CS1 Series.
Temperature control cannot be performed properly unless the I/O refresh inter-
val is at least 8 ms. Therefore, create programs that satisfy all of the following
conditions.
Set the cycle time to 8 ms min.
If the program processing time is short for the C200HX/HG/HE, C200HS,
and C200H, use the CYCLE TIME instruction SCAN(18) to set a minimum
cycle time.
If the program processing time is short for the CS1, set the cycle time to a
minimum value in the PC Setup.
When using the I/O Refresh instruction IORF with the Unit, provide an interval
of at least 8 ms between the end refreshes.
Provide an interval of at least 8 ms between the I/O Refresh instructions.
Normal I/O refresh
Normal I/O refresh
IORF
IORF
Normal I/O refresh
Command (A)
ON
OFF
Approx.
140 ms
Read data (A)
End refresh
End refresh
I/O Refresh instruction
I/O Refresh instruction
End refresh
Section 4-3
Command (B)
Read data (B)
8 ms min. (Cycle time)
8 ms min.
8 ms min.
8 ms min.
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