Cypress Semiconductor NoBL CY7C1470V33 Manual

Cypress Semiconductor NoBL CY7C1470V33 Manual

72-mbit (2m x 36/4m x 18/1m x 72) pipelined sram with nobl architecture

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Features
• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
— Available speed grades are 250, 200 and 167 MHz
• Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
• Fully registered (inputs and outputs) for pipelined
operation
• Byte Write capability
• Single 3.3V power supply
• 3.3V/2.5V I/O power supply
• Fast clock-to-output time
— 3.0 ns (for 250-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• CY7C1470V33, CY7C1472V33 available in
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1474V33
available in lead-free and non-lead-free 209 ball FBGA
package
• IEEE 1149.1 JTAG Boundary Scan compatible
• Burst capability—linear or interleaved burst order
• "ZZ" Sleep Mode option and Stop Clock option
Logic Block Diagram-CY7C1470V33 (2M x 36)
A0, A1, A
MODE
CLK
C
CEN
ADV/LD
BW
a
BW
b
BW
c
BW
d
WE
OE
CE1
CE2
CE3
ZZ
Cypress Semiconductor Corporation
Document #: 38-05289 Rev. *I
72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL™ Architecture
Functional Description
The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are
3.3V, 2M x 36/4M x 18/1M x 72 Synchronous pipelined burst
SRAMs with No Bus Latency™ (NoBL™) logic, respectively.
They are designed to support unlimited true back-to-back
Read/Write
CY7C1470V33, CY7C1472V33, and CY7C1474V33 are
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read transitions. The CY7C1470V33, CY7C1472V33,
and CY7C1474V33 are pin compatible and functionally equiv-
alent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the Byte Write Selects
(BW
and BW
input. All writes are conducted with on-chip synchronous
self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
BURST
A0'
D0
Q0
LOGIC
ADV/LD
C
WRITE ADDRESS
WRITE ADDRESS
REGISTER 1
REGISTER 2
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
READ LOGIC
SLEEP
CONTROL
198 Champion Court
operations
with
–BW
for CY7C1474V33, BW
a
h
–BW
for CY7C1472V33) and a Write Enable (WE)
a
b
S
D
E
A
N
T
S
A
E
MEMORY
S
WRITE
ARRAY
A
T
DRIVERS
E
M
E
P
R
S
I
N
E
G
INPUT
INPUT
E
E
REGISTER 1
REGISTER 0
,
San Jose
CA 95134-1709
CY7C1470V33
CY7C1472V33
CY7C1474V33
no
wait
states.
The
–BW
for CY7C1470V33
a
d
, CE
, CE
) and an
1
2
3
O
U
T
P
U
T
B
DQs
U
DQP
a
F
DQP
b
F
DQP
E
c
R
DQP
d
S
E
408-943-2600
Revised June 20, 2006
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Summary of Contents for Cypress Semiconductor NoBL CY7C1470V33

  • Page 1 Features • Pin-compatible and functionally equivalent to ZBT™ • Supports 250-MHz bus operations with zero wait states — Available speed grades are 250, 200 and 167 MHz • Internally self-timed output buffer control to eliminate the need to use asynchronous OE •...
  • Page 2: Selection Guide

    Logic Block Diagram-CY7C1472V33 (4M x 18) ADDRESS A0, A1, A REGISTER 0 MODE WRITE ADDRESS REGISTER 1 ADV/LD Logic Block Diagram-CY7C1474V33 (1M x 72) ADDRESS A0, A1, A REGISTER 0 MODE WRITE ADDRESS REGISTER 1 ADV/LD READ LOGIC Control Selection Guide Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current...
  • Page 3: Pin Configurations

    Pin Configurations DQPc CY7C1470V33 (2M x 36) DQPd Document #: 38-05289 Rev. *I 100-pin TQFP Packages DQPb CY7C1472V33 (4M x 18) DQPb DQPa CY7C1470V33 CY7C1472V33 CY7C1474V33 DQPa Page 3 of 29 [+] Feedback...
  • Page 4 Pin Configurations (continued) 165-ball FBGA (15 x 17 x 1.4 mm) Pinout NC/576M NC/1G NC/144M MODE NC/576M NC/1G NC/144M MODE Document #: 38-05289 Rev. *I CY7C1470V33 (2M x 36) CY7C1472V33 (4M x 18) CY7C1470V33 CY7C1472V33 CY7C1474V33 ADV/LD NC/288M ADV/LD NC/288M Page 4 of 29 [+] Feedback...
  • Page 5 Pin Configurations (continued) 209-ball FBGA (14 x 22 x 1.76 mm) Pinout DQPg DQPc DQPd DQPh NC/144M Document #: 38-05289 Rev. *I CY7C1474V33 (1M x 72) ADV/LD NC/576M NC/1G MODE CY7C1470V33 CY7C1472V33 CY7C1474V33 DQPf DQPb DQPa DQPe NC/288M Page 5 of 29 [+] Feedback...
  • Page 6: Pin Definitions

    Pin Definitions Pin Name I/O Type Input- Address Inputs used to select one of the address locations. Sampled at the rising edge of Synchronous the CLK. Input- Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Synchronous Sampled on the rising edge of CLK.
  • Page 7: Functional Overview

    Pin Definitions (continued) Pin Name I/O Type Test Mode Select This pin controls the Test Access Port state machine. Sampled on the rising edge of TCK. Synchronous JTAG Clock Clock input to the JTAG circuitry. Power Supply Power supply inputs to the core of the device. I/O Power Supply Power supply for the I/O circuitry.
  • Page 8 On the next clock rise the data presented to DQ and DQP /DQP a,b,c,d,e,f,g,h a,b,c,d,e,f,g,h /DQP for CY7C1470V33 & DQ a,b,c,d a,b,c,d CY7C1472V33) (or a subset for byte write operations, see Write Cycle Description table for details) inputs is latched into the device and the write is complete.
  • Page 9: Truth Table

    [1, 2, 3, 4, 5, 6, 7] Truth Table Operation Address Used Deselect Cycle None Continue None Deselect Cycle Read Cycle External (Begin Burst) Read Cycle Next (Continue Burst) NOP/Dummy Read External (Begin Burst) Dummy Read Next (Continue Burst) Write Cycle External (Begin Burst) Write Cycle...
  • Page 10 Partial Write Cycle Description Function (CY7C1470V33) Read Write – No bytes written Write Byte a – (DQ and DQP Write Byte b – (DQ and DQP Write Bytes b, a Write Byte c – (DQ and DQP Write Bytes c, a Write Bytes c, b Write Bytes c, b, a Write Byte d –...
  • Page 11: Tap Controller State Diagram

    IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1470V33, CY7C1472V33, and CY7C1474V33 incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM.
  • Page 12 Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the Tap Controller Block Diagram. Upon power-up, the instruction register is loaded with the IDCODE instruction.
  • Page 13 possible to capture all other signals and simply ignore the value of the CLK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO balls.
  • Page 14 3.3V TAP AC Test Conditions Input pulse levels ... V Input rise and fall times ... 1 ns Input timing reference levels ...1.5V Output reference levels...1.5V Test load termination supply voltage...1.5V 3.3V TAP AC Output Load Equivalent 1.5V Z = 50Ω TAP DC Electrical Characteristics And Operating Conditions (0°C <...
  • Page 15 Identification Register Definitions CY7C1470V33 Instruction Field (2M x 36) Revision Number (31:29) [12] Device Depth (28:24) 01011 Architecture/Memory 001000 Type(23:18) Bus Width/Density(17:12) 100100 Cypress JEDEC ID Code 00000110100 (11:1) ID Register Presence Indicator (0) Scan Register Sizes Register Name Instruction Bypass Boundary Scan Order - 165 FBGA Boundary Scan Order - 209 FBGA...
  • Page 16 Boundary Scan Exit Order (2M x 36) Bit # 165-Ball ID Bit # Boundary Scan Exit Order (4M x 18) Bit # 165-Ball ID Bit # Document #: 38-05289 Rev. *I 165-Ball ID Bit # 165-Ball ID 165-Ball ID Bit # 165-Ball ID CY7C1470V33 CY7C1472V33...
  • Page 17 Boundary Scan Exit Order (1M x 72) Bit # 209-Ball ID Bit # Document #: 38-05289 Rev. *I 209-Ball ID Bit # 209-Ball ID CY7C1470V33 CY7C1472V33 CY7C1474V33 Bit # 209-Ball ID Page 17 of 29 [+] Feedback...
  • Page 18: Maximum Ratings

    Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ... –65°C to +150°C Ambient Temperature with Power Applied... –55°C to +125°C Supply Voltage on V Relative to GND... –0.5V to +4.6V Supply Voltage on V Relative to GND ...
  • Page 19 [15] Capacitance Parameter Description Address Input Capacitance ADDRESS Data Input Capacitance DATA Control Input Capacitance CTRL Clock Input Capacitance Input/Output Capacitance [15] Thermal Resistance Parameters Description Θ Thermal Resistance (Junction to Ambient) Θ Thermal Resistance (Junction to Case) AC Test Loads and Waveforms 3.3V I/O Test Load OUTPUT OUTPUT...
  • Page 20: Switching Characteristics

    Switching Characteristics Over the Operating Range Parameter Description [18] (typical) to the First Access Read or Write Power Clock Clock Cycle Time Maximum Operating Frequency Clock HIGH Clock LOW Output Times Data Output Valid After CLK Rise OE LOW to Output Valid Data Output Hold After CLK Rise [19, 20, 21] Clock to High-Z...
  • Page 21: Switching Waveforms

    Switching Waveforms [22, 23, 24] Read/Write/Timing t CYC CENS CENH ADV/LD ADDRESS Data In-Out (DQ) WRITE WRITE D(A1) D(A2) Notes: 22. For this waveform ZZ is tied LOW. 23. When CE is LOW, CE is LOW, CE is HIGH and CE 24.
  • Page 22 Switching Waveforms (continued) [22, 23, 25] NOP, STALL and DESELECT Cycles ADV/LD ADDRESS Data In-Out (DQ) WRITE READ STALL D(A1) Q(A2) [26, 27] ZZ Mode Timing t ZZ t ZZI SUPPLY I DDZZ ALL INPUTS (except ZZ) Outputs (Q) Notes: 25.
  • Page 23: Ordering Information

    Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit Speed Package (MHz) Ordering Code Diagram CY7C1470V33-167AXC 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1472V33-167AXC CY7C1470V33-167BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
  • Page 24 Ordering Information (continued) Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit Speed Package (MHz) Ordering Code Diagram CY7C1470V33-250AXC 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1472V33-250AXC CY7C1470V33-250BZC 51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
  • Page 25: Package Diagrams

    Package Diagrams 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050) R 0.08 MIN. 0° MIN. 0.20 MAX. 0.25 GAUGE PLANE R 0.08 MIN. 0°-7° 0.20 MAX. 0.60±0.15 0.20 MIN. 1.00 REF. DETAIL Document #: 38-05289 Rev. *I 16.00±0.20 14.00±0.10 0.30±0.08...
  • Page 26 Package Diagrams (continued) TOP VIEW PIN 1 CORNER SEATING PLANE Document #: 38-05289 Rev. *I 165-ball FBGA (15 x 17 x 1.4 mm) (51-85165) 0.15(4X) CY7C1470V33 CY7C1472V33 CY7C1474V33 PIN 1 CORNER BOTTOM VIEW Ø0.05 M C Ø0.25 M C A B Ø0.45±0.05(165X) 1.00 5.00...
  • Page 27 Package Diagrams (continued) 209-ball FBGA (14 x 22 x 1.76 mm) (51-85167) NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05289 Rev.
  • Page 28 Document History Page Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05289 REV. ECN No. Issue Date 114676 08/06/02 121520 01/27/03 223721 See ECN 235012 See ECN 243572 See ECN 299511 See ECN 323039...
  • Page 29 Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05289 REV. ECN No. Issue Date 416221 See ECN 472335 See ECN Document #: 38-05289 Rev. *I Orig. of Change Description of Change Converted from Preliminary to Final Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street”...

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