Cypress Semiconductor CY7C1470V25 Specification Sheet

Features
• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
— Available speed grades are 250, 200 and 167 MHz
• Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
• Fully registered (inputs and outputs) for pipelined
operation
• Byte Write capability
• Single 2.5V power supply
• 2.5V/1.8V I/O supply (V
DDQ
• Fast clock-to-output times
— 3.0 ns (for 250-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• CY7C1470V25, CY7C1472V25 available in
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1474V25
available in lead-free and non-lead-free 209 ball FBGA
package
• IEEE 1149.1 JTAG Boundary Scan compatible
• Burst capability—linear or interleaved burst order
• "ZZ" Sleep Mode option and Stop Clock option
Logic Block Diagram-CY7C1470V25 (2M x 36)
A0, A1, A
MODE
CLK C
CEN
ADV/LD
BW
a
BW
b
BW
c
BW
d
WE
OE
CE1
CE2
CE3
ZZ
Cypress Semiconductor Corporation
Document #: 38-05290 Rev. *I
72-Mbit(2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL™ Architecture
)
ADDRESS
REGISTER 0
A1
D1
A0 BURST
D0
LOGIC
ADV/LD
C
WRITE ADDRESS WRITE ADDRESS
REGISTER 1 REGISTER 2
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
READ LOGIC
SLEEP
CONTROL
• 198 Champion Court
Functional Description
The CY7C1470V25/CY7C1472V25/CY7C1474V25 are 2.5V,
2M x 36/4M x 18/1M x 72 Synchronous pipelined burst SRAMs
with No Bus Latency™ (NoBL™) logic, respectively. They are
designed to support unlimited true back-to-back Read/Write
operations with
CY7C1470V25/CY7C1472V25/CY7C1474V25 are equipped
with the advanced (NoBL) logic required to enable consec-
utive Read/Write operations with data being transferred on
every clock cycle. This feature dramatically improves the
throughput of data in systems that require frequent Write/Read
transitions. The CY7C1470V25/CY7C1472V25/CY7C1474V25
are pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle. Write operations are controlled by the
Byte Write Selects (BW –BW
a
for CY7C1470V25 and BW
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
A1'
Q1
A0'
Q0
S
E
N
S
E
MEMORY
WRITE
ARRAY
A
DRIVERS
M
P
S
E
INPUT
E
REGISTER 1
,
• San Jose CA 95134-1709
CY7C1470V25
CY7C1472V25
CY7C1474V25
no wait states.
for CY7C1474V25, BW –BW
h a
–BW for CY7C1472V25) and a
a b
, CE , CE ) and an
1 2 3
O
D
U
A T
P
T
U
A
T
S
B
DQs
U
T
DQP
a
F
E
DQP
b
F
E
DQP
E c
R
R DQP
d
I S
N
E
G
INPUT
E
REGISTER 0
• 408-943-2600
Revised June 21, 2006
The
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