Cypress Semiconductor CY7C1386D Specification Sheet

18-mbit (512k x 36/1 mbit x 18) pipelined dcd sync sram

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18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200, and 167 MHz
• Registered inputs and outputs for pipelined operation
• Optimal for performance (double-cycle deselect)
• Depth expansion without wait state
• 3.3V core power supply (V
• 2.5V or 3.3V IO power supply (V
• Fast clock-to-output times
— 2.6 ns (for 250 MHz device)
• Provides high-performance 3-1-1-1 access rate
• User selectable burst counter supporting Intel
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self timed writes
• Asynchronous output enable
• CY7C1386D/CY7C1387D available in JEDEC-standard
Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball
FBGA package. CY7C1386F/CY7C1387F available in
Pb-free and non Pb-free 119-ball BGA package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• ZZ sleep mode option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Notes
1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.
2. CE
and CE
are for TQFP and 165 FBGA packages only. 119 BGA is offered only in Single Chip Enable.
3
2
Cypress Semiconductor Corporation
Document Number: 38-05545 Rev. *E
)
DD
DDQ)
®
Pentium
198 Champion Court
CY7C1386D, CY7C1386F
CY7C1387D, CY7C1387F
Functional Description
The
CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F
SRAM integrates 512K x 36/1M x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive edge triggered clock
input (CLK). The synchronous inputs include all addresses, all
data inputs, address-pipelining chip enable (CE
expansion chip enables (CE
(ADSC, ADSP, and ADV), write enables ( BW
global write (GW). Asynchronous inputs include the output
enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either address strobe processor (ADSP) or
®
address strobe controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self timed write cycle.This part supports byte write
operations (see
Pin Configurations on page 3
[4, 5, 6, 7, 8]
on page 9
for further details). Write cycles can be
one to four bytes wide as controlled by the byte write control
inputs. GW active LOW causes all bytes to be written. This
device incorporates an additional pipelined enable register
which delays turning off the output buffers an additional cycle
when a deselect is executed.This feature allows depth
expansion without penalizing system performance.
The
CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F
operates from a +3.3V core power supply while all outputs
operate with a +3.3V or +2.5V supply. All inputs and outputs
are JEDEC-standard and JESD8-5-compatible.
250 MHz
200 MHz
2.6
3.0
350
300
70
70
,
San Jose
CA 95134-1709
[1]
), depth
1
[2]
and CE
), burst control inputs
2
3
, and BWE), and
X
and
Truth Table
167 MHz
Unit
3.4
ns
275
mA
70
mA
408-943-2600
Revised Feburary 09, 2007
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Summary of Contents for Cypress Semiconductor CY7C1386D

  • Page 1 • Separate processor and controller address strobes • Synchronous self timed writes • Asynchronous output enable • CY7C1386D/CY7C1387D available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA package. CY7C1386F/CY7C1387F available in Pb-free and non Pb-free 119-ball BGA package •...
  • Page 2 Logic Block Diagram – CY7C1386D/CY7C1386F ADDRESS A0,A1,A REGISTER MODE ADSC ADSP BYTE WRITE REGISTER ,DQP BYTE WRITE REGISTER ,DQP BYTE WRITE REGISTER BYTE WRITE REGISTER ENABLE REGISTER CONTROL Logic Block Diagram – CY7C1387D/CY7C1387F ADDRESS A0, A1, A REGISTER MODE BURST...
  • Page 3: Pin Configurations

    Pin Configurations 100-pin TQFP Pinout (3 Chip Enables) CY7C1386D (512K X 36) Document Number: 38-05545 Rev. *E CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F CY7C1387D (1M x 18) Page 3 of 30 [+] Feedback...
  • Page 4 Document Number: 38-05545 Rev. *E 119-Ball BGA Pinout (1 Chip Enable) CY7C1386F (512K x 36) ADSP ADSC MODE NC/72M CY7C1387F (1M x 18) ADSP ADSC MODE NC/36M CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F NC/576M NC/1G NC/36M NC/576M NC/1G Page 4 of 30 [+] Feedback...
  • Page 5 165-Ball FBGA Pinout (3 Chip Enable) NC/288M NC/144M NC/72M MODE NC/36M NC/288M NC/144M NC/72M MODE NC/36M Document Number: 38-05545 Rev. *E CY7C1386D (512K x 36) CY7C1387D (1M x 18) ‘V CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F ADSC NC/512M ADSP NC/1G ADSC ADSP NC/576M...
  • Page 6: Pin Definitions

    The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQP placed in a tri-state condition. Power supply inputs to the core of the device. CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F , CE , and CE...
  • Page 7: Functional Overview

    After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single read cycles are supported. The CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F is a double cycle deselect part. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will tri-state immediately after the next clock rise.
  • Page 8 A synchronous self timed write mechanism has been provided to simplify the write operations. The CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F is a common IO device, the output enable (OE) must be deasserted HIGH before presenting data to the DQ inputs.
  • Page 9: Truth Table

    8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW). Document Number: 38-05545 Rev. *E CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F ZZ ADSP...
  • Page 10 Truth Table for Read/Write [6, 9] Function (CY7C1386D/CY7C1386F) Read Read Write Byte A – (DQ and DQP Write Byte B – (DQ and DQP Write Bytes B, A Write Byte C – (DQ and DQP Write Bytes C, A Write Bytes C, B Write Bytes C, B, A Write Byte D –...
  • Page 11 Diagram. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F TAP Controller Block TAP Controller State Diagram).
  • Page 12 (for 119-BGA package) or bit #89 (for 165-FBGA package). When this scan cell, called the “extest output bus tri-state,” is latched into the preload register during the Update-DR state in CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F ). The SRAM clock input might not be...
  • Page 13 11. Test conditions are specified using the load in TAP AC test conditions. t Document Number: 38-05545 Rev. *E CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F register. When the EXTEST instruction is entered, this bit will directly control the output Q-bus pins.
  • Page 14 = 2.5V = 100 µA = 3.3V = 2.5V = 3.3V = 2.5V = 3.3V = 2.5V GND < V < V CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F to 2.5V 1.25V 50Ω Z = 50 Ω 20pF Unit + 0.3 + 0.3 –0.5...
  • Page 15 Do Not Use. This instruction is reserved for future use. Do Not Use. This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F Description Describes the version number Reserved for internal use.
  • Page 16 Bit # Ball ID Bit # Notes 14. Balls that are NC (No Connect) are preset LOW. 15. Bit#85 is preset HIGH. Document Number: 38-05545 Rev. *E CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F [14, 15] Ball ID Bit # Ball ID Bit #...
  • Page 17 165-Ball BGA Boundary Scan Order Bit # Ball ID Note 16. Bit#89 is preset HIGH. Document Number: 38-05545 Rev. *E CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F [14, 16] Bit # Ball ID Bit # Ball ID Internal Page 17 of 30 [+] Feedback...
  • Page 18: Maximum Ratings

    , f = 0 /2), undershoot: V (AC) > –2V (pulse width less than t (min) within 200 ms. During this time V < V and V CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F + 0.5V Ambient 3.3V –5%/+10% 2.5V – 5% to V Unit 3.135...
  • Page 19: Thermal Resistance

    5 pF R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V 5 pF R = 1538Ω INCLUDING JIG AND SCOPE CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F 119 BGA 165 FBGA Unit 119 BGA 165 FBGA Unit Package Package 23.8 20.7 °C/W...
  • Page 20: Switching Characteristics

    V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F –200 –167 Unit (minimum) initially before a read or write operation...
  • Page 21: Switching Waveforms

    Q(A2 + 1) Q(A2 + 2) Q(A1) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH: CE CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F Burst continued with new base address Deselect cycle t CHZ Q(A2 + 3)
  • Page 22 ADSC extends burst t WES t WEH ADV suspends burst D(A2) D(A2 + 1) BURST WRITE DON’T CARE UNDEFINED LOW. CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 3) D(A3)
  • Page 23 28. The data bus (Q) remains in high-Z following a Write cycle, unless a new read access is initiated by ADSP or ADSC. 29. GW is HIGH. Document Number: 38-05545 Rev. *E CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F t WES t WEH...
  • Page 24 30. Device must be deselected when entering ZZ sleep mode. See cycle descriptions table for all possible signal conditions to deselect the device. 31. DQs are in high-Z when exiting ZZ sleep mode. Document Number: 38-05545 Rev. *E DDZZ High-Z DON’T CARE CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F ZZREC t RZZI DESELECT or READ Only Page 24 of 30...
  • Page 25: Ordering Information

    51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1387D-200BZI CY7C1386D-200BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1387D-200BZXI Document Number: 38-05545 Rev. *E CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F Part and Package Type Operating Range Commercial...
  • Page 26 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1387D-250BZI CY7C1386D-250BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1387D-250BZXI Document Number: 38-05545 Rev. *E CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F Commercial Industrial Page 26 of 30 [+] Feedback...
  • Page 27: Package Diagrams

    2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F 1.40±0.05 12°±1°...
  • Page 28 Package Diagrams (continued) Figure 2. 119-Ball BGA (14 x 22 x 2.4 mm) (51-85115) Document Number: 38-05545 Rev. *E CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F 51-85115-*B Page 28 of 30 [+] Feedback...
  • Page 29 JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE WEIGHT : 0.475g PACKAGE CODE : BB0AC JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE CODE : BB0AC CY7C1386D, CY7C1386F CY7C1387D, CY7C1387F BOTTOM VIEW PIN 1 CORNER BOTTOM VIEW PIN 1 CORNER Ø0.05 M C...
  • Page 30 Document History Page Document Title: CY7C1386D/CY7C1387D/CY7C1386F/CY7C1387F, 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM Document Number: 38-05545 Orig. of REV. ECN NO. Issue Date Change 254550 See ECN 288531 See ECN 326078 See ECN 418125 See ECN...

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