Cypress Semiconductor CY7C1381DV25 Specification Sheet

18-mbit (512k x 36/1m x 18) flow-through sram

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18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
Features
• Supports 133 MHz bus operations
• 512K x 36/1M x 18 common IO
• 2.5V core power supply (V
• 2.5V IO supply (V
)
DDQ
• Fast clock-to-output times, 6.5 ns (133 MHz version)
• Provides high-performance 2-1-1-1 access rate
• User selectable burst counter supporting Intel
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self timed write
• Asynchronous output enable
• CY7C1381DV25/CY7C1383DV25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non
Pb-free 165-ball FBGA package.
CY7C1381FV25/CY7C1383FV25 available in Pb-free and
non Pb-free 119-ball BGA package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• ZZ sleep mode option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Notes
1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.
2. CE
CE
are for TQFP and 165 FBGA package only. 119 BGA is offered only in 1 chip enable.
3,
2
Cypress Semiconductor Corporation
Document #: 38-05547 Rev. *E
)
DD
®
Pentium
198 Champion Court
CY7C1381DV25, CY7C1381FV25
CY7C1383DV25, CY7C1383FV25
Functional Description
The
CY7C1381DV25/CY7C1383DV25/CY7C1381FV25/
CY7C1383FV25 is a 2.5V, 512K x 36 and 1M x 18
synchronous flow through SRAMs, designed to interface with
high-speed microprocessors with minimum glue logic.
Maximum access delay from clock rise is 6.5 ns (133 MHz
version). A 2-bit on-chip counter captures the first address in
a burst and increments the address automatically for the rest
of the burst access. All synchronous inputs are gated by
®
registers controlled by a positive edge triggered clock input
(CLK). The synchronous inputs include all addresses, all data
inputs, address pipelining chip enable (CE
chip enables (CE
and CE
2
ADSP, and ADV), write enables ( BW
write (GW). Asynchronous inputs include the output enable
(OE) and the ZZ pin.
CY7C1381DV25/CY7C1383DV25/CY7C1381FV25/
The
CY7C1383FV25 allows interleaved or linear burst sequences,
selected by the MODE input pin. A HIGH selects an
interleaved burst sequence, while a LOW selects a linear burst
sequence. Burst accesses can be initiated with the processor
address strobe (ADSP) or the cache controller address strobe
(ADSC) inputs. Address advancement is controlled by the
address advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either address strobe processor (ADSP) or
address strobe controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the advance pin (ADV).
The
CY7C1381DV25/CY7C1383DV25/CY7C1381FV25/
CY7C1383FV25 operates from a +2.5V core power supply
while all outputs also operate with a +2.5 supply. All inputs and
outputs are JEDEC-standard and JESD8-5-compatible.
133 MHz
6.5
210
70
,
San Jose
CA 95134-1709
[1]
), depth expansion
1
[2]
), burst control inputs (ADSC,
3
, and BWE), and global
x
100 MHz
Unit
8.5
ns
175
mA
70
mA
408-943-2600
Revised Feburary 14, 2007
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Summary of Contents for Cypress Semiconductor CY7C1381DV25

  • Page 1 • Separate processor and controller address strobes • Synchronous self timed write • Asynchronous output enable • CY7C1381DV25/CY7C1383DV25 available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA package. CY7C1381FV25/CY7C1383FV25 available in Pb-free and non Pb-free 119-ball BGA package •...
  • Page 2 Logic Block Diagram – CY7C1381DV25/CY7C1381FV25 ADDRESS A0, A1, A REGISTER MODE COUNTER AND LOGIC ADSC ADSP BYTE BYTE WRITE REGISTER WRITE REGISTER WRITE REGISTER WRITE REGISTER BYTE WRITE REGISTER ENABLE REGISTER SLEEP Logic Block Diagram – CY7C1383DV25/CY7C1383FV25 ADDRESS A0,A1,A REGISTER...
  • Page 3: Pin Configurations

    Pin Configurations 100-pin TQFP Pinout (3 Chip Enable) CY7C1381DV25 (512K x 36) Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 CY7C1383DV25 (1 Mbit x 18) Page 3 of 28 [+] Feedback...
  • Page 4 Pin Configurations (continued) NC/288M NC/144M NC/288M NC/144M NC/72M Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 119-Ball BGA Pinout CY7C1381FV25 (512K x 36) ADSP ADSC MODE NC/72M CY7C1383FV25 (1M x 18) ADSP ADSC MODE NC/36M NC/576M NC/1G NC/36M NC/576M...
  • Page 5 NC/288M NC/144M NC/72M MODE NC/36M NC/288M NC/144M NC/72M MODE NC/36M Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 CY7C1381DV25 (512K x 36) CY7C1383DV25 (1Mx 18) ADSC ADSP NC/576M NC/1G ADSC ADSP NC/576M NC/1G Page 5 of 28 [+] Feedback...
  • Page 6: Pin Definitions

    OE. Bidirectional data parity IO lines. Functionally, these signals are identical to DQ Synchronous write sequences, DQP Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 Description feed the 2-bit counter. and CE to select or deselect the device. ADSP is ignored if CE and CE to select or deselect the device.
  • Page 7: Functional Overview

    Three synchronous chip selects (CE , CE asynchronous output enable (OE) provide for easy bank Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 Description . This pin is not available on TQFP packages. selection and output tri-state control. ADSP is ignored if CE is HIGH.
  • Page 8 ZZ active to sleep current ZZ Inactive to exit sleep current RZZI Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation sleep mode. Two clock cycles are required to enter into or exit from this sleep mode.
  • Page 9: Truth Table

    8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW). Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 ADSP...
  • Page 10 Truth Table for Read/Write [4, 9] Function (CY7C1381DV25/CY7C1381FV25) Read Read Write Byte A (DQ , DQP Write Byte B (DQ , DQP Write Bytes A, B (DQ , DQ , DQP , DQP Write Byte C (DQ , DQP Write Bytes C, A (DQ...
  • Page 11 IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1381DV25/CY7C1383DV25 incorporates a serial boundary scan test access port (TAP). This part is fully compliant with 1149.1. JEDEC-standard 3.3V or 2.5V IO logic levels. The CY7C1381DV25/CY7C1383DV25 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register.
  • Page 12 It also places the instruction register between the TDI and TDO balls and allows Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state.
  • Page 13 11. Test conditions are specified using the load in TAP AC test conditions. t Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 register. When the EXTEST instruction is entered, this bit will directly control the output Q-bus pins.
  • Page 14 Boundary Scan Order (119-ball BGA package) Boundary Scan Order (165-ball FBGA package) Note 12. All voltages referenced to V (GND). Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 2.5V TAP AC Output Load Equivalent to 2.5V [12] Test Conditions = –1.0 mA, V...
  • Page 15: Identification Codes

    Bit # Ball ID Bit # Notes 13. Balls that are NC (No Connect) are preset LOW. 14. Bit #85 is preset HIGH. Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 Description [13, 14] Ball ID Bit # Ball ID...
  • Page 16 165-Ball BGA Boundary Scan Order Bit # Ball ID Note 15. Bit #89 is preset HIGH. Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 [13, 15] Bit # Ball ID Bit # Ball ID Internal Page 16 of 28...
  • Page 17: Maximum Ratings

    17. T : assumes a linear ramp from 0V to V power up Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 DC Input Voltage ... –0.5V to V Current into Outputs (LOW) ... 20 mA Static Discharge Voltage... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current ...
  • Page 18: Thermal Resistance

    = 50Ω = 1.25V Note 18. Tested initially and after any design or process change that may affect these parameters. Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 100 TQFP Test Conditions Package = 25°C, f = 1 MHz, = 2.5V...
  • Page 19: Switching Characteristics

    These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 24. This parameter is sampled and not 100% tested. Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 133 MHz Description Min.
  • Page 20: Timing Diagrams

    Q(A1) High-Z t CDV Single READ Note 25. On this diagram, when CE is LOW: CE is LOW, CE Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 t ADH ADVS ADVH ADV suspends burst t CDV t OELZ t DOH...
  • Page 21 BURST READ Single WRITE Note 26. Full width write can be initiated by either GW LOW, or by GW HIGH, BWE LOW and BW Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 ADSC extends burst ADV suspends burst D(A2)
  • Page 22 27. The data bus (Q) remains in high-Z following a write cycle, unless a new read access is initiated by ADSP or ADSC. 28. GW is HIGH. Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 t DS t DH...
  • Page 23 29. Device must be deselected when entering ZZ sleep mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 30. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 t ZZREC...
  • Page 24: Ordering Information

    CY7C1381DV25-133BZC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1383DV25-133BZC CY7C1381DV25-133BZXC 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1383DV25-133BZXC CY7C1381DV25-133AXI 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free...
  • Page 25: Package Diagrams

    0° MIN. 0.20 MAX. 0.25 GAUGE PLANE R 0.08 MIN. 0°-7° 0.20 MAX. 0.60±0.15 0.20 MIN. 1.00 REF. DETAIL Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 16.00±0.20 14.00±0.10 0.30±0.08 0.65 TYP. SEATING PLANE STAND-OFF 0.05 MIN. NOTE: 0.15 MAX.
  • Page 26 Package Diagrams (continued) Figure 2. 119-Ball BGA (14 x 22 x 2.4 mm) (51-85115) Document #: 38-05547 Rev. *E CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 51-85115-*B Page 26 of 28 [+] Feedback...
  • Page 27 The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1381DV25, CY7C1381FV25 CY7C1383DV25, CY7C1383FV25 0.15(4X)
  • Page 28 Document History Page Document Title: CY7C1381DV25/CY7C1383DV25/CY7C1381FV25/CY7C1383FV25, 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Document Number: 38-05547 Orig. of REV. ECN NO. Issue Date Change 254518 See ECN 288531 See ECN 326078 See ECN 416321 See ECN 475009 See ECN...

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