Cypress Semiconductor CY7C1380C Specification Sheet

18-mb (512k x 36/1m x 18) pipelined sram

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Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 225, 200,166 and
133MHz
• Registered inputs and outputs for pipelined operation
• 3.3V core power supply
• 2.5V / 3.3V I/O operation
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
— 2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.4 ns (for 166-MHz device)
— 4.2 ns (for 133-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-Ball fBGA packages
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• "ZZ" Sleep Mode Option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Shaded areas contain advance information.
Please contact your local Cypress sales representative for availability of these parts.
Notes:
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE
, CE
are for TQFP and 165 fBGA package only. 119 BGA is offered only in 1 Chip Enable.
3
2
Cypress Semiconductor Corporation
Document #: 38-05237 Rev. *D
18-Mb (512K x 36/1M x 18) Pipelined SRAM
Functional Description
The CY7C1380C/CY7C1382C SRAM integrates 524,288 x 36
and 1,048,576 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable ( CE
Enables (CE
and ADV ), Write Enables ( BW
( GW ). Asynchronous inputs include the Output Enable ( OE )
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor ( ADSP ) or
Address Strobe Controller ( ADSC ) are active. Subsequent
burst addresses can be internally generated as controlled by
®
the Advance pin ( ADV ).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the byte write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1380C/CY7C1382C operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
250 MHz
225 MHz
2.6
350
70
3901 North First Street
[1]
[2]
and CE
), Burst Control inputs ( ADSC , ADSP ,
2
3
X
200 MHz
167 MHz
2.8
3.0
3.4
325
300
275
70
70
70
,
San Jose
CA 95134
CY7C1380C
CY7C1382C
), depth-expansion Chip
1
, and BWE ), and Global Write
133 MHz
Unit
4.2
ns
245
mA
70
mA
408-943-2600
Revised February 26, 2004
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Summary of Contents for Cypress Semiconductor CY7C1380C

  • Page 1 Cypress Semiconductor Corporation Document #: 38-05237 Rev. *D Functional Description The CY7C1380C/CY7C1382C SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).
  • Page 2 Logic Block Diagram – CY7C1380C (512K x 36) A0, A1, A ADDRESS REGISTER MODE ADSC ADSP BYTE WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER ENABLE REGISTER SLEEP CONTROL Logic Block Diagram – CY7C1382C (1M x 18)
  • Page 3: Pin Configurations

    Pin Configurations CY7C1380C (512K X 36) Document #: 38-05237 Rev. *D 100-pin TQFP Pinout CY7C1382C CY7C1380C CY7C1382C (1M x 18) Page 3 of 36 [+] Feedback...
  • Page 4 Pin Configurations (continued) NC / 72M Document #: 38-05237 Rev. *D 119-ball BGA (1 Chip Enable with JTAG) CY7C1380C (512K x 36) ADSP ADSC MODE NC / 72M CY7C1382C (512K x 18) ADSP ADSC MODE NC / 36M CY7C1380C CY7C1382C...
  • Page 5 NC / 72M MODE NC / 36M NC / 288M NC / 72M MODE NC / 36M Document #: 38-05237 Rev. *D 165-ball fBGA CY7C1380C (512K x 36) CY7C1382C (1M x 18) CY7C1380C CY7C1382C ADSC NC / 144M ADSP ADSC ADSP...
  • Page 6 CY7C1380C–Pin Definitions Name TQFP 37,36,32, P4,N4, 33,34,35, A2,B2, 42,43,44,45, C2,R2, 46,47,48, A3,B3,C3, 49,50,81, T3,T4,A5,B5, 82,99,100 T5,A6,B6,C6, 93,94,95, L5,G5, G3,L3 Document #: 38-05237 Rev. *D fBGA R6,P6,A2, Input- Address Inputs used to select one of the A10,B2, Synchronous 256K address locations. Sampled at the rising...
  • Page 7 CY7C1380C–Pin Definitions (continued) Name TQFP ADSP ADSC 52,53,56, K6,L6, DQs, DQPs 57,58,59, M6,N6, 62,63,68, K7,L7, 69,72,73, N7,P7, 74,75,78, E6,F6, 79,2,3,6,7,8,9, G6,H6, 12,13,18,19,22 D7,E7, G7,H7, 23,24,25, D1,E1, 28,29,51, G1,H1, 80,1,30 E2,F2, G2,H2, K1,L1, N1,P1, K2,L2, M2,N2, P6,D6, D2,P2 15,41,65, J2,C4,J4,R4, 17,40,67,...
  • Page 8 CY7C1380C–Pin Definitions (continued) Name TQFP 5,10,21,26,55, 60,71, 4,11,20,27,54, A1,F1,J1,M1, 61,70, A7,F7,J7,M7, MODE 14,16,66, B1,C1, 39,38 R1,T1,T2,J3, L4,J5,R5,6T, B7,C7, Document #: 38-05237 Rev. *D fBGA I/O Ground Ground for the I/O circuitry. C3,C9,D3,D9, I/O Power Power supply for the I/O circuitry.
  • Page 9 Advance Input signal, sampled on the rising Synchronous edge of CLK, active LOW. When asserted, it automatically increments the address in a burst cycle. CY7C1380C CY7C1382C Description are sampled active. A1: A0 are fed and BWE). to select/deselect the device. ADSP is is HIGH.
  • Page 10 H8,J4,J8, K4,K8,L4, L8,M4,M8 H2,C4,C5,C6, Ground Ground for the core of the device. C7,C8,D5,D6, D7,E5,E6,E7, F5,F6,F7, G5,G6,G7, H5,H6,H7,J5,J 6,J7, K5,K6,K7, L5,L6,L7, M5,M6,M7,N4, I/O Ground Ground for the I/O circuitry. CY7C1380C CY7C1382C Description is deasserted HIGH. Page 10 of 36 [+] Feedback...
  • Page 11 A5,B1,B4, No Connects. Not internally connected to the die. C1,C2,C10,D1 ,D10, E1,E10,F1, F10,G1, G10,H1,H3,H9 ,H10,J2,J11, K11,L2,L1,M2, M11, N2,N10,N5,N7 N11,P1,A1, B11, P2,R2 CY7C1380C CY7C1382C Description or left . This pin is not available on TQFP Page 11 of 36 [+] Feedback...
  • Page 12: Functional Overview

    A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1380C is a common I/O device, the Output Enable (OE) must be deserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE.
  • Page 13: Truth Table

    ZZ > V – 0.2V ZZ > V – 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled ZZ ADSP ADSC CY7C1380C CY7C1382C , CE , CE , ADSP, and ADSC must after the ZZ input ZZREC Min. Max.
  • Page 14 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are Tri-State when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW) . Truth Table for Read/Write Function (CY7C1380C) Read Read Write Byte A –...
  • Page 15: Tap Controller State Diagram

    IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1380C incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM.
  • Page 16 CLK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO balls. CY7C1380C CY7C1382C Unlike SAMPLE/PRELOAD...
  • Page 17 TH t CYC t TMSS t TMSH t TDIS t TDIH t TDOV t TDOX DON’T CARE UNDEFINED [9, 10] Symbol TCYC TDOV TDOX TMSS TDIS TMSH TDIH = 1ns. CY7C1380C CY7C1382C Units Page 17 of 36 [+] Feedback...
  • Page 18: Test Conditions

    = 3.3V = 2.5V = 100 µA = 3.3V = 2.5V = 3.3V = 2.5V = 3.3V = 2.5V GND < V < V CY7C1380C CY7C1382C to 2.5V 1.25V 50Ω Z = 50Ω 20pF UNITS + 0.3 + 0.3 -0.3 -0.3...
  • Page 19 RESERVED Do Not Use: This instruction is reserved for future use. BYPASS Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Document #: 38-05237 Rev. *D CY7C1380C CY7C1382C DESCRIPTION (512KX36) (1MX18) 0100 Describes the version number.
  • Page 20 119-Ball BGA Boundary Scan Order CY7C1380C (512K x 36) BIT# BALL ID Document #: 38-05237 Rev. *D BIT# BALL ID Not Bonded (Preset to 1) Internal Internal CY7C1380C CY7C1382C Page 20 of 36 [+] Feedback...
  • Page 21 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Internal Not Bonded (Preset to 0) Internal Internal CY7C1380C CY7C1382C Page 21 of 36 [+] Feedback...
  • Page 22 165-Ball fBGA Boundary Scan Order CY7C1380C (512K x 36) BIT# BALL ID Document #: 38-05237 Rev. *D BIT# BALL ID Internal CY7C1380C CY7C1382C Page 22 of 36 [+] Feedback...
  • Page 23 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) CY7C1380C CY7C1382C Page 23 of 36 [+] Feedback...
  • Page 24 5.0-ns cycle, 200 MHz 6.0-ns cycle, 167 MHz 7.5-ns cycle, 133 MHz = Max, Device Deselected, All speeds ≤ 0.3V or V > V – 0.3V, CY7C1380C CY7C1382C Ambient Temperature 0°C to +70°C 3.3V – 5%/+10% 2.5V – 5% to V Min.
  • Page 25: Electrical Characteristics

    Test conditions follow standard test methods and procedures for measuring thermal impedence, per EIA / JESD51. TQFP Test Conditions Package = 25°C, f = 1 MHz, = 3.3V. = 2.5V CY7C1380C CY7C1382C Min. Max. Unit /2). < V fBGA Package Package Unit °C/W...
  • Page 26 R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V OUTPUT 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1380C CY7C1382C ALL INPUT PULSES ≤ 1ns ≤ 1ns ALL INPUT PULSES ≤ 1ns ≤ 1ns Page 26 of 36 [+] Feedback...
  • Page 27: Switching Characteristics

    V and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ = 2.5V. CY7C1380C CY7C1382C 167 MHz 133 MHz Min. Max Min. Max Unit...
  • Page 28: Switching Waveforms

    Q(A2) Q(A2 + 1) Q(A2 + 2) BURST READ DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH: CE LOW. CY7C1380C CY7C1382C Burst continued with new base address Deselect cycle t CHZ Q(A2 + 3) Q(A2)
  • Page 29 WES t WEH ADV suspends burst D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED CY7C1380C CY7C1382C ADSC extends burst t ADS t ADH t WES t WEH ADVH ADVS D(A2 + 3)
  • Page 30 24. GW is HIGH. Document #: 38-05237 Rev. *D t WES t WEH t DS t DH t OELZ D(A3) Q(A4) Q(A4+1) Single WRITE BURST READ DON’T CARE UNDEFINED CY7C1380C CY7C1382C D(A5) D(A6) Q(A4+2) Q(A4+3) Back-to-Back WRITEs Page 30 of 36 [+] Feedback...
  • Page 31 25. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 26. DQs are in high-Z when exiting ZZ sleep mode Document #: 38-05237 Rev. *D t ZZREC t RZZI DESELECT or READ Only High-Z DON’T CARE CY7C1380C CY7C1382C Page 31 of 36 [+] Feedback...
  • Page 32: Ordering Information

    Ordering Information Speed (MHz) Ordering Code CY7C1380C-250AC CY7C1382C-250AC CY7C1380C-250BGC CY7C1382C-250BGC CY7C1380C-250BZC CY7C1382C-250BZC CY7C1380C-225AC CY7C1382C-225AC CY7C1380C-225BGC CY7C1382C-225BGC CY7C1380C-225BZC CY7C1382C-225BZC CY7C1380C-200AC CY7C1382C-200AC CY7C1380C-200BGC CY7C1382C-200BGC CY7C1380C-200BZC CY7C1382C-200BZC CY7C1380C-167AC CY7C1382C-167AC CY7C1380C-167BGC CY7C1382C-167BGC CY7C1380C-167BZC CY7C1382C-167BZC CY7C1380C-133AC CY7C1380C-167AI CY7C1382C-167AI CY7C1380C-167BGI CY7C1382C-167BGI CY7C1380C-167BZI CY7C1382C-167BZI Shaded areas contain advance information.
  • Page 33: Package Diagrams

    Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. DIMENSIONS ARE IN MILLIMETERS. 0.30±0.08 0.65 12°±1° TYP. (8X) STAND-OFF 0.05 MIN. SEATING PLANE 0.15 MAX. CY7C1380C CY7C1382C 1.40±0.05 SEE DETAIL 0.20 MAX. 1.60 MAX. 51-85050-*A Page 33 of 36 [+] Feedback...
  • Page 34 CY7C1380C CY7C1382C Package Diagrams (continued) 119-Lead PBGA (14 x 22 x 2.4 mm) BG119 51-85115-*B Document #: 38-05237 Rev. *D Page 34 of 36 [+] Feedback...
  • Page 35 Intel and Pentium are registered trademarks of Intel Corporation. PowerPC is a trademark of IBM Corporation. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05237 Rev. *D CY7C1380C CY7C1382C 51-85122-*C...
  • Page 36 Document History Page Document Title: CY7C1380C/CY7C1382C 18-Mb (512K x 36/1M x 18) Pipelined SRAM Document Number: 38-05237 REV. ECN NO. Issue Date 116277 08/27/02 121540 11/21/02 121797 11/21/02 128904 09/11/03 206081 02/13/04 Document #: 38-05237 Rev. *D Orig. of Change...

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