Cypress Semiconductor CY7C1380DV25 Specification Sheet

18-mbit (512k x 36/1m x 18) pipelined sram

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Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200, and 167 MHz
• Registered inputs and outputs for pipelined operation
• 2.5V core power supply
• Fast clock-to-output times, 2.6 ns (for 250-MHz device)
• Provides high-performance 3-1-1-1 access rate
• User selectable burst counter supporting Intel
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• CY7C1380DV25/CY7C1382DV25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non
Pb-free 165-ball FBGA package.
CY7C1380FV25/CY7C1382FV25 available in Pb-free and
non Pb-free 119-ball BGA package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• ZZ sleep mode option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Notes:
1. For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on www.cypress.com.
2. CE
, CE
are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable
3
2
Cypress Semiconductor Corporation
Document #: 38-05546 Rev. *E
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
®
®
Pentium
250 MHz
2.6
350
70
198 Champion Court
CY7C1380DV25, CY7C1380FV25
CY7C1382DV25, CY7C1382FV25
Functional Description
The
CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/
CY7C1382FV25 SRAM integrates 512K x 36 and 1M x 18
SRAM cells with advanced synchronous peripheral circuitry
and a two-bit counter for internal burst operation. All
synchronous inputs are gated by registers controlled by a
positive edge triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelining
chip enable (CE
), depth expansion chip enables (CE
1
[2]
CE
), burst control inputs (ADSC, ADSP, and ADV), write
3
enables (BW
, and BWE), and global write (GW).
X
Asynchronous inputs include the output enable (OE) and the
ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either address strobe processor (ADSP) or
address strobe controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self timed write cycle.This part supports byte write
operations (see
Pin Definitions on page 6
5, 6, 7, 8]
on page 9
for further details). Write cycles can be one
to two or four bytes wide as controlled by the byte write control
inputs. GW when active LOW causes all bytes to be written.
The
CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/
CY7C1382FV25 operates from a +2.5V core power supply
while all outputs may operate with a +2.5 supply. All inputs and
outputs are JEDEC-standard and JESD8-5-compatible.
200 MHz
3.0
300
70
,
San Jose
CA 95134-1709
[1]
and
2
and
Truth Table
167 MHz
Unit
3.4
ns
275
mA
70
mA
408-943-2600
Revised Feburary 15, 2007
[4,
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Summary of Contents for Cypress Semiconductor CY7C1380DV25

  • Page 1 • Separate processor and controller address strobes • Synchronous self timed writes • Asynchronous output enable • Single Cycle Chip Deselect • CY7C1380DV25/CY7C1382DV25 available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA package. CY7C1380FV25/CY7C1382FV25 available in Pb-free and non Pb-free 119-ball BGA package •...
  • Page 2 Logic Block Diagram – CY7C1380DV25/CY7C1380FV25 A0, A1, A ADDRESS REGISTER MODE ADSC ADSP BYTE WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER BYTE WRITE REGISTER ENABLE REGISTER SLEEP CONTROL Logic Block Diagram – CY7C1382DV25/CY7C1382FV25 ADDRESS A0, A1, A REGISTER BURST...
  • Page 3: Pin Configurations

    Pin Configurations 100-pin TQFP Pinout (3 Chip Enable) CY7C1380DV25 (512K X 36) Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 CY7C1382DV25 (1M x 18) Page 3 of 29 [+] Feedback...
  • Page 4 Pin Configurations (continued) NC/288M NC/144M NC/288M NC/144M NC/72M Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 119-Ball BGA Pinout CY7C1380FV25 (512K x 36) ADSP ADSC MODE NC/72M CY7C1382FV25 (1M x 18) ADSP ADSC MODE NC/36M NC/576M NC/1G NC/36M NC/576M...
  • Page 5 NC/144M NC/72M MODE NC/36M NC/288M NC/144M NC/72M MODE NC/36M Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 CY7C1380DV25 (512K x 36) CY7C1382DV25 (1M x 18) ADSC NC/576M ADSP NC/1G ADSC ADSP NC/576M NC/1G Page 5 of 29 [+] Feedback...
  • Page 6: Pin Definitions

    Synchronous Power Supply Ground Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 Description Address inputs used to select one of the address locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE active.
  • Page 7: Functional Overview

    (OE) provide for easy bank selection and output tri-state control. ADSP is ignored if CE is HIGH. Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 Description Ground for the IO circuitry. Selects burst order. When tied to GND selects linear burst sequence. When tied to or left floating selects interleaved burst sequence.
  • Page 8 ZZREC ZZ Active to sleep current ZZ Inactive to exit sleep current RZZI Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 Burst Sequences CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/ CY7C1382FV25 provides a two-bit wraparound counter, fed by A1: A0, that implements either an interleaved or linear burst sequence.
  • Page 9: Truth Table

    8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are Tri-State when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW). Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 ZZ ADSP...
  • Page 10 Truth Table for Read/Write [6, 9] Function (CY7C1380DV25/CY7C1380FV25) Read Read Write Byte A – (DQ and DQP Write Byte B – (DQ and DQP Write Bytes B, A Write Byte C – (DQ and DQP Write Bytes C, A Write Bytes C, B Write Bytes C, B, A Write Byte D –...
  • Page 11 IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1380DV25/CY7C1382DV25 incorporates a serial boundary scan test access port (TAP). This part is fully compliant with 1149.1. JEDEC-standard 3.3V or 2.5V IO logic levels. The CY7C1380DV25/CY7C1382DV25 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register.
  • Page 12 IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 The IDCODE instruction is loaded into the instruction register upon power up or whenever the TAP controller is given a test logic reset state.
  • Page 13 11. Test conditions are specified using the load in TAP AC test conditions. t Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 directly control the output Q-bus pins. Note that this bit is...
  • Page 14 Boundary Scan Order (119-ball BGA package) Boundary Scan Order (165-ball FBGA package) Note: 12. All voltages referenced to V (GND). Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 2.5V TAP AC Output Load Equivalent to 2.5V [12] Test Conditions = –1.0 mA, V...
  • Page 15: Identification Codes

    Bit # Ball ID Bit # Notes: 13. Balls that are NC (No Connect) are preset LOW. 14. Bit #85 is preset HIGH. Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 Description [13, 14] Ball ID Bit # Ball ID...
  • Page 16 165-Ball BGA Boundary Scan Order Bit # Ball ID Note: 15. Bit #89 is preset HIGH. Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 [13, 15] Bit # Ball ID Bit # Ball ID Internal Page 16 of 29...
  • Page 17: Maximum Ratings

    17. T : assumes a linear ramp from 0V to V power up Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 DC Input Voltage ... –0.5V to V Current into Outputs (LOW) ... 20 mA Static Discharge Voltage... >2001V (per MIL-STD-883, Method 3015) Latch-up Current ...
  • Page 18: Thermal Resistance

    = 50Ω = 1.25V Note: 18. Tested initially and after any design or process change that may affect these parameters. Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 100 TQFP Test Conditions Package = 25°C, f = 1 MHz, = 2.5V...
  • Page 19: Switching Characteristics

    These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 24. This parameter is sampled and not 100% tested. Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 250 MHz Min.
  • Page 20: Switching Waveforms

    Q(A1) High-Z t CO Single READ Note: 25. On this diagram, when CE is LOW, CE is LOW, CE Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 t ADVS t ADVH suspends burst. t OEV t CO t OELZ...
  • Page 21 BURST READ Single WRITE Note: 26. Full width write can be initiated by either GW LOW, or by GW HIGH, BWE LOW and BW Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 t WES t WEH ADV suspends burst...
  • Page 22 27. The data bus (Q) remains in high-Z following a write cycle, unless a new read access is initiated by ADSP or ADSC. 28. GW is HIGH. Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 t WES t WEH...
  • Page 23 29. Device must be deselected when entering ZZ sleep mode. See cycle descriptions table for all possible signal conditions to deselect the device. 30. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 DDZZ High-Z DON’T CARE...
  • Page 24: Ordering Information

    51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1382DV25-200BZI CY7C1380DV25-200BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1382DV25-200BZXI Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 Part and Package Type Operating Range Commercial...
  • Page 25 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) CY7C1382DV25-250BZI CY7C1380DV25-250BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free CY7C1382DV25-250BZXI Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 Commercial Industrial Page 25 of 29 [+] Feedback...
  • Page 26: Package Diagrams

    0° MIN. 0.20 MAX. 0.25 GAUGE PLANE R 0.08 MIN. 0°-7° 0.20 MAX. 0.60±0.15 0.20 MIN. 1.00 REF. DETAIL Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 16.00±0.20 14.00±0.10 0.30±0.08 0.65 TYP. SEATING PLANE STAND-OFF 0.05 MIN. NOTE: 0.15 MAX.
  • Page 27 Figure 2. 119-Ball BGA (14 x 22 x 2.4 mm) (51-85115) A1 CORNER 0.70 REF. 12.00 30° TYP. SEATING PLANE Document #: 38-05546 Rev. *E CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 Ø1.00(3X) REF. 0.15(4X) Ø0.05 M C Ø0.25 M C A B Ø0.75±0.15(119X) 1.27...
  • Page 28 The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25 0.15(4X)
  • Page 29 Document History Page Document Title: CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/CY7C1382FV25, 18-Mbit (512K x 36/1M x 18) Pipelined SRAM Document Number: 38-05546 Issue Orig. of REV. ECN NO. Date Change 254515 See ECN 288531 See ECN 326078 See ECN 418125 See ECN 475009 See ECN...

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