Cypress Semiconductor CY7C1338G Specification Sheet

Cypress 4-mbit (128k x 32) flow-through sync sram specification sheet

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Features
• 128K x 32 common I/O
• 3.3V core power supply (V
• 2.5V or 3.3V I/O supply (V
• Fast clock-to-output times
— 6.5 ns (133-MHz version)
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Offered in lead-free 100-Pin TQFP package, lead-free
and non-lead-free 119-Ball BGA package
• "ZZ" Sleep Mode option
Logic Block Diagram
A0, A1, A
MODE
ADV
CLK
ADSC
ADSP
BW
D
BW
C
BW
B
BW
A
BWE
GW
CE1
CE2
CE3
OE
SLEEP
ZZ
CONTROL
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05521 Rev. *D
4-Mbit (128K x 32) Flow-Through Sync SRAM
)
DD
)
DDQ
®
ADDRESS
REGISTER
A
[1:0]
Q1
BURST
COUNTER
AND LOGIC
Q0
CLR
DQ
BYTE
D
WRITE REGISTER
DQ
BYTE
C
WRITE REGISTER
DQ
BYTE
B
WRITE REGISTER
DQ
BYTE
A
WRITE REGISTER
ENABLE
REGISTER
198 Champion Court
Functional Description
The CY7C1338G is a 128K x 32 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
, and BWE), and Global Write (GW). Asynchronous
[A:D]
inputs include the Output Enable (OE) and the ZZ pin.
The CY7C1338G allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1338G operates from a +3.3V core power supply
while all outputs may operate with either a +2.5 or +3.3V
supply. All inputs and
JESD8-5-compatible.
DQ
BYTE
D
WRITE REGISTER
DQ
BYTE
C
WRITE REGISTER
MEMORY
ARRAY
DQ
BYTE
B
WRITE REGISTER
DQ
BYTE
A
WRITE REGISTER
,
San Jose
CA 95134-1709
CY7C1338G
[1]
and CE
), Burst
2
3
outputs
are
JEDEC-standard
OUTPUT
SENSE
BUFFERS
AMPS
INPUT
REGISTERS
408-943-2600
Revised July 5, 2006
DQs

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Summary of Contents for Cypress Semiconductor CY7C1338G

  • Page 1 Cypress Semiconductor Corporation Document #: 38-05521 Rev. *D Functional Description The CY7C1338G is a 128K x 32 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automati- cally for the rest of the burst access.
  • Page 2: Selection Guide

    Selection Guide Maximum Access Time Maximum Operating Current Maximum Standby Current Pin Configurations BYTE C BYTE D Document #: 38-05521 Rev. *D 133 MHz 100-Pin TQFP Pinout CY7C1338G CY7C1338G 100 MHz Unit BYTE B BYTE A Page 2 of 17...
  • Page 3: Pin Definitions

    ADSP ADSC MODE NC/72M Description to select/deselect the device. ADSP is ignored if CE to select/deselect the device. CE to select/deselect the device. CE CY7C1338G NC/576M NC/9M NC/1G NC/36M , CE , and CE are sampled active. A and BWE).
  • Page 4: Functional Overview

    Maximum access delay from the clock rise (t ) is 6.5 ns (133-MHz device). The CY7C1338G supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™...
  • Page 5 OE. Burst Sequences The CY7C1338G provides an on-chip two-bit wraparound burst counter inside the SRAM. The burst counter is fed by ZZ Mode Electrical Characteristics Parameter...
  • Page 6: Truth Table

    Current Current Current , BW , BW , BW ) and BWE = L or GW= L. WRITE = H when all Byte write enable signals CY7C1338G L-H Tri-State L-H Tri-State L-H Tri-State L-H Tri-State L-H Tri-State Tri-State L-H Tri-State...
  • Page 7 7. Table only lists a partial listing of the byte write combinations. Any combination of BW Document #: 38-05521 Rev. *D [2, 7] is valid. Appropriate write will be done based on which byte write is active. CY7C1338G Page 7 of 17...
  • Page 8: Maximum Ratings

    – 0.3V or V f = 0, inputs static /2), undershoot: V (AC) > –2V (Pulse width less than t (min.) within 200 ms. During this time V < V CY7C1338G Ambient Temperature 3.3V −5%/+10% 2.5V –5% 0°C to +70°C –40°C to +85°C Min.
  • Page 9: Thermal Resistance

    5 pF R = 351Ω INCLUDING JIG AND SCOPE R = 1667Ω 2.5V OUTPUT 5 pF R =1538Ω INCLUDING JIG AND SCOPE CY7C1338G 119 BGA 100 TQFP Max. Max. 100 TQFP 119 BGA Package Package 30.32 34.1 6.85 14.0 ALL INPUT PULSES ≤...
  • Page 10: Switching Characteristics

    V POWER is less than t and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ = 2.5V. CY7C1338G –133 –100 Min. Max. Min. Max. Unit...
  • Page 11: Timing Diagrams

    DOH Q(A2) Q(A2 + 1) Q(A2 + 2) DON’T CARE is HIGH and CE is LOW. When CE is HIGH: CE CY7C1338G Deselect Cycle Q(A2 + 3) Q(A2) Q(A2 + 1) Burst wraps around to its initial state BURST...
  • Page 12 ADV suspends burst D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) BURST WRITE DON’T CARE UNDEFINED LOW. [A:D] CY7C1338G ADSC extends burst t ADS t ADH t WES t WEH t ADVS t ADVH D(A2 + 3) D(A3)
  • Page 13 19. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC. 20. GW is HIGH. Document #: 38-05521 Rev. *D t DS t DH t OELZ D(A3) OEHZ t CDV Q(A4) Single WRITE DON’T CARE CY7C1338G D(A5) Q(A4+1) Q(A4+2) Q(A4+3) Back-to-Back BURST READ WRITEs UNDEFINED Page 13 of 17 D(A6)
  • Page 14 21. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 22. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05521 Rev. *D t ZZ t ZZI I DDZZ High-Z DON’T CARE CY7C1338G t ZZREC t RZZI DESELECT or READ Only Page 14 of 17...
  • Page 15: Ordering Information

    Speed Package (MHz) Ordering Code Diagram CY7C1338G-133AXC 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1338G-133BGC 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) CY7C1338G-133BGXC CY7C1338G-133AXI 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free CY7C1338G-133BGI 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
  • Page 16 Cypress against all charges. 119-Ball BGA (14 x 22 x 2.4 mm) (51-85115) Ø1.00(3X) REF. 0.15(4X) CY7C1338G Ø0.05 M C Ø0.25 M C A B Ø0.75±0.15(119X) 1.27...
  • Page 17 Document History Page Document Title: CY7C1338G 4-Mbit (128K x 32) Flow-Through Sync SRAM Document Number: 38-05521 REV. ECN NO. Issue Date 224369 See ECN 278513 See ECN 333626 See ECN 418633 See ECN 480368 See ECN Document #: 38-05521 Rev. *D Orig.

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