STMicroelectronics X-NUCLEO-IHM07M1 User Manual page 8

The L6230 integrates a three-phase bridge which consists of six power MOSFETs. Using the N-channel power
MOSFET for the upper transistors in the bridge requires a gate drive voltage above the power supply voltage.
The bootstrapped supply (VBOOT) is obtained through an internal oscillator and a few external components to
implement a charge pump circuit as shown below.
J1
2
1
CON2
D12
SMBJ48A-TR
100nF/ 100V
2.1.2 Overcurrent detection (OCP) and current sensing measurement
The L6230 driver implements overcurrent protection with an internal detection circuit that does not require an
external resistor.
The current is compared with an embedded current reference and the output signals a fault condition to the
DIAG pin that goes to ground. This pin, connected to the
condition and immediately disables the driving signals.
The current sensing input is connected to the sensing resistors Rsense (shown in the figure below). You can
choose between three-shunt or single-shunt configuration through J5 and J6 jumpers (refer to
settings).
U11
L6230PD
33
VSB
4
VSA
30
VBOOT
7
VCP
13
CP+
28
CP-
24
CPOUT
9
IN 1
10
EN1
UM1943 - Rev 2
Figure 6. X-NUCLEO-IHM07M1 – charge pump circuit
VIN +
C13 C15
C11 100uF, 63V
100nF/ 100V
SMBD 7000
R21
CURR ENTR EF
33K
Figure 7. X-NUCLEO-IHM07M1 current sensing circuit
12 SENS1
SENS1
8 SENS2
Vshunt_2
SENS2
25 SENS3
SENS3
1
GND
36
GND
19
GND
18
GND
29
EN3
EN3
EN3
11
IN 3
IN 3
IN 3
27
EN2
EN2
EN2
26
IN 2
IN 2
IN 2
22
DI AG/EN
R25 R26
39k 39k
Motor J2
220nF, 16V
C9
D1
3
C12
10n 100V
J16
RIN G
CP+
STM32 Nucleo board (BKIN timer function), detects this
CON3
1
Vshunt_1
2
SENS1
3
Vshunt_2
J5
3V3
Vshunt_1
R43
R22 0.33 1W
10K
DI AG/EN
C17
1nF/ 6.3V
Power section
U11
L6230PD
33
VSB
4
VSA
30
VBOOT
7
VCP
13
CP+
CP+
28
CP-
CP-
24
CPOUT
CPOUT
9
IN 1
10
EN1
Table 1. Jumper
CON3
1
Vshunt_3
2
SENS3
3
Vshunt_2
J6
Vshunt_2 Vshunt_3
R44
0.33 1W
UM1943
12
SENS1
8
SENS2
25
SENS3
1
GND
36
GND
19
GND
18
GND
29
EN3
11
IN 3
27
EN2
26
IN 2
22
DI AG/EN
R45
0.33 1W
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