Is25Lp512M - 512M-Bit Serial Flash Memory With Dual And Quad Spi; Is43Tr16512Bl - 1Gx8, 512Mx16 8Gb Ddr3 Sdram - Analog Devices EV-21569-SOM Manual

IS25LP512M - 512M-bit Serial Flash Memory with Dual and
Quad SPI
The IS25LP512M Serial Flash memory offers a versatile storage solution with high flexibility and performance in a
simplified pin count package. ISSI's "Industry Standard Serial Interface" Flash is for systems that require limited
space, a low pin count, and low power consumption. The device is accessed through a 4-wire SPI Interface consist-
ing of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which
can also be configured to serve as multi-I/O (see pin descriptions).
The device supports Dual and Quad I/O, as well as standard, Dual Output, and Quad Output SPI. Clock frequen-
cies of up to 133MHz allow for equivalent clock rates of up to 532MHz (133MHz x 4) which equates to
66.5Mbytes of data throughput. The IS25xE series of Flash adds support for DTR (Double Transfer Rate) com-
mands that transfer addresses and read data on both edges of the clock.These transfer rates can outperform 16-bit
Parallel Flash memories, allowing for efficient memory access to support XIP (eXecute In Place) operation.
The memory array is organized into programmable pages of 256/512 bytes. This family supports page program
mode where 1 to 256/512 bytes of data are programmed in a single command.
QPI (Quad Peripheral Interface) supports 2-cycle instructions, further reducing instruction times. Pages can be
erased in groups of 4Kbyte sectors, 32Kbyte blocks, 64K/256Kbyte blocks, and/or the entire chip. The uniform sec-
tor and block architecture allows for a high degree of flexibility so that the device can be utilized for a broad variety
of applications requiring solid data retention.

IS43TR16512BL - 1Gx8, 512Mx16 8Gb DDR3 SDRAM

• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
• High speed data transfer rates with system frequency up to 933 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
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EV-21569-SOM Manual

IS25LP512M - 512M-bit Serial Flash Memory with Dual and Quad SPI

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