Main Characteristics - Renesas 2SK3069 Datasheet

Silicon n channel mos fet high speed power switching
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2SK3069

Main Characteristics

Power vs. Temperature Derating
200
150
100
50
0
50
Case Temperature T
Typical Output Characteristics
100
V
5 V
80
4 V
60
40
20
0
2
Drain to Source Voltage V
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
1.6
1.2
0.8
0.4
10 A
0
4
Gate to Source Voltage V
Rev.11.00 Sep 07, 2005 page 3 of 7
100
150
200
(°C)
C
= 10 V
Pulse Test
GS
3.5 V
3 V
2.5 V
4
6
8
(V)
DS
Pulse Test
I
= 50 A
D
20 A
12
8
16
(V)
GS
1000
300
100
30
10
3
1
0.3
0.1
0.1
100
80
60
40
20
0
10
100
50
20
10
5
2
1
20
Maximum Safe Operation Area
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
3
0.3
1
10
Drain to Source Voltage V
Typical Transfer Characteristics
V
= 10 V
DS
Pulse Test
75°C
Tc = –25°C
1
2
3
Gate to Source Voltage V
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
V
= 4 V
GS
10 V
20
5
10
1
2
Drain Current I
D
30
100
(V)
DS
25°C
4
5
(V)
GS
100
200
50
(A)

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